Negative differential resistance in GaN nanocrystals above room temperature

Chitara, Basant; Jebakumar, D.S. Ivan; Rao, C. N. R.; Krupanidhi, S. B.

doi:10.1088/0957-4484/20/40/405205

Cited by 17 publications

(15 citation statements)

References 29 publications

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“…This effect can be used in switches and high-frequency oscillators [5]. This phenomenon has been impressively demonstrated in low-dimensional structures [6,7]. Usually, this NDR effect can be attributed to the intrinsic resonance tunneling, experimentally or theoretically [8,9].…”

Section: Introductionmentioning

confidence: 99%

Negative Differential Resistance in ZnO Nanowires Bridging Two Metallic Electrodes

Zhi‐Jian

Lee

2010

Nanoscale Res Lett

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The electrical transport through nanoscale contacts of ZnO nanowires bridging the interdigitated Au electrodes shows the negative differential resistance (NDR) effect. The NDR peaks strongly depend on the starting sweep voltage. The origin of NDR through nanoscale contacts between ZnO nanowires and metal electrodes is the electron charging and discharging of the parasitic capacitor due to the weak contact, rather than the conventional resonant tunneling mechanism.

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Section: Introductionmentioning

confidence: 99%

Negative Differential Resistance in ZnO Nanowires Bridging Two Metallic Electrodes

Zhi‐Jian

Lee

2010

Nanoscale Res Lett

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“…[3][4][5] To fabricate III-nitride dots by self-assembly, the stranski-krastanow (SK) growth mode and recently, the droplet epitaxy (DE) technique has been utilized. [6][7][8][9][10][11][12] In DE technique, to convert the droplets into semiconductor nanocrystals, group III droplets are exposed to a subsequent group V molecular beam in DE-MBE approach. During this process, liquid metal droplet * Author to whom correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Droplet Epitaxy of InN Quantum Dots on Si(111) by RF Plasma-Assisted Molecular Beam Epitaxy

Kumar¹,

Roul²,

Bhat³

et al. 2010

adv sci lett

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InN quantum dots (QDs) were fabricated on Si(111) substrate by droplet epitaxy using an RF plasma-assisted MBE system. Variation of the growth parameters, such as growth temperature and deposition time, allowed us to control the characteristic size and density of the QDs. As the growth temperature was increased from 100 C to 300 C, an enlargement of QD size and a drop in dot density were observed, which was led by the limitation of surface diffusion of adatoms with the limited thermal energy. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to assess the QDs size and density. The chemical bonding configurations of InN QDs were examined by X-ray photo-electron spectroscopy (XPS). Fourier transform infrared (FTIR) spectrum of the deposited InN QDs shows the presence of InN bond. Temperature-dependent photoluminescence (PL) measurements showed that the emission peak energies of the InN QDs are sensitive to temperature and show a strong peak emission at 0.79 eV.

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“…[25][26][27] In section 2, we present a theoretical framework based on Marcus' ET theory for the study of charge transport in molecular junctions, valid when the molecular bridge is weakly coupled to the metal electrodes. 32 In sections 3-4 we show how the resulting theoretical model can be used to study the current-voltage response of redox molecular junctions, and to predict and study various NDR phenomena [33][34][35][36][37][38][39] and their dependence on properties of the junction. Section 5 concludes.…”

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confidence: 99%

Nonlinear Charge Transport in Redox Molecular Junctions: A Marcus Perspective

2011

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Redox molecular junctions are molecular conduction junctions that involve more than one oxidation state of the molecular bridge. This property is derived from the ability of the molecule to transiently localize transmitting electrons, implying relatively weak molecule-leads coupling and, in many cases, the validity of the Marcus theory of electron transfer. Here we study the implications of this property on the nonlinear transport properties of such junctions. We obtain an analytical solution of the integral equations that describe molecular conduction in the Marcus kinetic regime and use it in different physical limits to predict some important features of nonlinear transport in metal-molecule-metal junctions. In particular, conduction, rectification, and negative differential resistance can be obtained in different regimes of interplay between two different conduction channels associated with different localization properties of the excess molecular charge, without specific assumptions about the electronic structure of the molecular bridge. The predicted behaviors show temperature dependences typically observed in the experiment. The validity of the proposed model and ways to test its predictions and implement the implied control strategies are discussed.

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Negative differential resistance in GaN nanocrystals above room temperature

Cited by 17 publications

References 29 publications

Negative Differential Resistance in ZnO Nanowires Bridging Two Metallic Electrodes

Negative Differential Resistance in ZnO Nanowires Bridging Two Metallic Electrodes

Droplet Epitaxy of InN Quantum Dots on Si(111) by RF Plasma-Assisted Molecular Beam Epitaxy

Nonlinear Charge Transport in Redox Molecular Junctions: A Marcus Perspective

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