Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation

Abstract

Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation.

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

“…22 This photon induced charge injection process was recently also observed for Al 2 O 3 films synthesized by ALD during a laser spectroscopic study. 23 A similar beneficial effect from charge injection was also reported for AlF 3 films. 24 Furthermore, the reported UV stability of the interface defect density 22 From mass spectrometry cracking patterns, the most likely parent molecules contributing to the signals at the selected mass-to-charge ratios have been determined.…”

Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

“…SHG allows for contactless probing of the electric field below the Si surface induced by fixed charges in the dielectric. 20,21 Secondharmonic photons are resonantly generated at an energy of 3.4 eV in the space charge region of Si when the sample is irradiated by laser light of 1.7 eV. This electric-field induced SHG ͑EFISH͒ contribution is a measure of the field-effect passivation and can be extracted from the measured data by modeling the spectral dependence taking other contributions to the SHG signal as well as the optical propagation in the film͑s͒ into account.…”

“…This electric-field induced SHG ͑EFISH͒ contribution is a measure of the field-effect passivation and can be extracted from the measured data by modeling the spectral dependence taking other contributions to the SHG signal as well as the optical propagation in the film͑s͒ into account. 20,21 The SHG spectra for single layer SiN x and the corresponding SiO x / SiN x stack are compared in Fig. 2.…”

Electric field induced surface passivation of Si by atomic layer deposited Al<inf>2</inf>O<inf>3</inf> studied by optical second-harmonic generation

“…To achieve this, the negative Ofcan be related to the electric field E~c (z)in the Si SCR by numerically integrating Poisson's equation. Subsequent integration of E~c (z)over the SCR, taking into account the penetration and escape depths of the fundamental and SHG radiation, gives the EFISH electric field and, hence, the EFISH intensity [10,24] Of of (1.3 ± 0.1) x 10 13 cm-2 , as measured in a corona charging experiment was used for calibration [7,19]. This value of Of yields an electric field at the position of the interface of E~c (0) =2.1 MV ern", corresponding to a strong EFISH contribution.…”

“…In this paper we characterize as-deposited and annealed Si(100)/AI 203 structures with interfacial SiO x synthesized by plasma-assisted ALD using spectroscopic SHG [19]. The results are compared with SHG results obtained on an a-SiNx:H film deposited with plasmaenhanced chemical vapor deposition (PECVD).…”