Electric field induced surface passivation of Si by atomic layer deposited Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; studied by optical second-harmonic generation

Kessels, W.M.M.; Gielis, Jjh Joost; Hoex, Bram; Terlinden, N.M.; Dingemans, G Gijs; Verlaan, V.; Sanden, M.C.M. van de

doi:10.1109/pvsc.2009.5411651

2009 34th IEEE Photovoltaic Specialists Conference (PVSC) 2009

DOI: 10.1109/pvsc.2009.5411651

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Electric field induced surface passivation of Si by atomic layer deposited Al<inf>2</inf>O<inf>3</inf> studied by optical second-harmonic generation

W.M.M. Kessels

Jjh Joost Gielis

Bram Hoex

et al.

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Electric field induced surface passivation of Si by atomic layer deposited Al<inf>2</inf>O<inf>3</inf> studied by optical second-harmonic generation

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References 33 publications

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