Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

Khan, Asif Islam; Chatterjee, Korok; Duarte, Juan Pablo; Lu, Zhong‐Yuan; Sachid, Angada B.; Khandelwal, Sourabh; Ramesh, R.; Hu, Chenming; Salahuddin, Sayeef

doi:10.1109/led.2015.2501319

Cited by 208 publications

(101 citation statements)

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“…The fact that the ferroelectric material can exhibit such a state of negative capacitance has already been demonstrated. 3,4,[6][7][8][9][10][11][12][13][14][15][16][17][18] Therefore, if another dielectric capacitor is placed in series with the ferroelectric [as shown schematically in Fig. 1(b)], a voltage amplification is expected across the dielectric capacitor.…”

mentioning

confidence: 99%

Differential voltage amplification from ferroelectric negative capacitance

Khan

Hoffmann

Chatterjee

et al. 2017

Applied Physics Letters

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It is well known that one needs an external source of energy to provide voltage amplification. Because of this, conventional circuit elements such as resistors, inductors or capacitors cannot provide amplification all by themselves. Here, we demonstrate that a ferroelectric can cause a differential amplification without needing such an external energy source. As the ferroelectric switches from one polarization state to the other, a transfer of energy takes place from the ferroelectric to the dielectric, determined by the ratio of their capacitances, which, in turn, leads to the differential amplification. This amplification is very different in nature from conventional inductor-capacitor based circuits where an oscillatory amplification can be observed. The demonstration of differential voltage amplification from completely passive capacitor elements only, has fundamental ramifications for next generation electronics. Free Energy Charge C<0 a Time Source Voltage Ferroelectric Capacitor Voltage Amplification b FIG. 1: Voltage amplification due to ferroelectric negative capacitance: (a) Energy landscape of a ferroelectric capacitor. The capacitance, C, is negative in the region enclosed by the dashed box. (b) The experimental setup.

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confidence: 99%

Differential voltage amplification from ferroelectric negative capacitance

Khan

Hoffmann

Chatterjee

et al. 2017

Applied Physics Letters

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“…In [9], Q G shows only a weak dependence on V DS which makes DIBL more predominant than DIBR. In a different setting where Q G becomes a stronger function of V DS , we may expect appearance of both NDR and DIBR.…”

Section: B Drain-induced Barrier Raising (Dibr)mentioning

confidence: 97%

“…The key difference between the structure of NCFETs and conventional MOSFETs is the presence of a ferroelectric material in the gate stack. As in the case of recent experiments [8] [9], the ferroelectric and baseline MOSFET in our work are supposed to be spatially separated, but connected by a metal layer with the same contact area, which provides the same gate charge density (Q G ) to both the internal gate and ferroelectric surfaces. The channel length (L ch ) and T F E are subject to variation, whereas the channel thickness (T Si ) and equivalent oxide thickness (EOT) are assumed to be 5 and 2 nm, respectively.…”

Section: Simulation Approachmentioning

confidence: 99%

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Analysis of Drain-Induced Barrier Rising in Short-Channel Negative-Capacitance FETs and Its Applications

Seo

Lee

Shin

2017

IEEE Trans. Electron Devices

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Abstract-We investigate the performance of hysteresisfree short-channel negative-capacitance field-effect transistors (NCFETs) by combining quantum mechanical calculations with the Landau-Khalatnikov equation. When the subthreshold swing (SS) becomes smaller than 60 mV/dec, a negative value of draininduced barrier lowering (DIBL) is obtained. This behavior, drain-induced barrier rising (DIBR), causes negative differential resistance (NDR) in the output characteristics of NCFETs. We also examine the performance of an inverter composed of hysteresis-free NCFETs to assess the effects of DIBR at the circuit level. Contrary to our expectation, although hysteresisfree NCFETs are used, hysteresis behavior is observed in the transfer properties of the inverter. Furthermore, it is expected that the NCFET inverter with hysteresis behavior can be used as a Schmitt trigger inverter.Index Terms-Subthreshold swing, ferroelectric, negative capacitance FET, hysteresis behavior, drain-induced barrier lowering, Schmitt trigger inverter

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“…[129,130] In 2015, a combination of the FinFET and NCFET structures termed NC-FinFET was proposed and experimentally verified to exhibit an SS of 55 mV dec −1 . [50,[61][62][63][64]131,132] Figure 9a,b presents the structure and test results of a relatively early NC-FinFET. [50,[61][62][63][64]131,132] Figure 9a,b presents the structure and test results of a relatively early NC-FinFET.…”

Section: Nc-finfetmentioning

confidence: 99%

Ferroelectric Negative Capacitance Field Effect Transistor

Wang

et al. 2018

Adv Elect Materials

115

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such as steep subthreshold swing (SS), high switching ratio (I on /I off ), adjustable hysteresis, compatibility with standard semiconductor fabrication processes, and environmental friendliness, promotes NCFET to be a promising candidate to lower power consumption and solve the heat problem in ULSI.As early as the 1960s, the concept of negative capacitance (NC) was proposed in amorphous semiconductor chalcogenides thin film, [25,26] then the NC effect was observed in several devices, such as p-n junctions, [27,28] Schottky diodes, [29,30] metal-insulator-metal diodes, [31] and others. [32][33][34][35] Concretely, the NC effect occurs when the reciprocal of the second derivation of potential energy U with respect to the ferroelectric polarization charge Q F is negative, which is usually achieved during the switching process of ferroelectric polarization. [36,37] NCFET achieves steep SS through the NC voltage amplification effect by adding a ferroelectric layer into the transistor gate stack. [22] NCFET simulation methods vary according to the types of transistor gate structures-metal ferroelectric semiconductor field-effect transistor (MFSFET), metal ferroelectric insulator semiconductor field-effect transistor (MFISFET), and metal ferroelectric metal insulator semiconductor field-effect transistor (MFMISFET). However, the basic principle is to realize a match between the channel charge Q and the ferroelectric polarization charge P, [38][39][40][41][42] no matter what the specific gate structure is.Furthermore, the influencing factors of NCFET's electrical properties have been qualitatively analyzed and summarized according to numerous simulation results. Commonly, a tradeoff exists between SS and hysteresis, [22] and we can design and manipulate the gate structure, [41] ferroelectric thickness (t Fe ), [22] ferroelectric material parameters, [38] silicon doping concentration, [39,43] temperature, [44] work frequency, [45][46][47][48] and high-κ dielectric [23,49,50] to optimize the electrical performance of NCFET and meet specific practical application requirement.The experimental researches on NCFETs can be mainly classified into three categories based on various kinds of ferroelectrics. First, the NCFET based on organic ferroelectric-poly(vinylidene difluoride-trifluoroethylene)[P(VDF-TrFE)], has been experimentally demonstrated, and achieves minimum SS (SS min ) = 13 mV dec −1 with small hysteresis. [51,52] Second, the NCFET based on lead zirconate titanate (PZT), a type of inorganic perovskite-type ferroelectric, exhibits hysteretic switching with With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralargescale integration (ULSI) is limited by the physical barrier termed "Boltzmann Tyranny." Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field-effect transistor (Fe-NCFET) is proposed in order to reduce the subthresho...

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Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

Cited by 208 publications

References 12 publications

Differential voltage amplification from ferroelectric negative capacitance

Differential voltage amplification from ferroelectric negative capacitance

Analysis of Drain-Induced Barrier Rising in Short-Channel Negative-Capacitance FETs and Its Applications

Ferroelectric Negative Capacitance Field Effect Transistor

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