The astounding progress of electronics in the 20 th century sometimes obscures the dramatic story of repeated reinvention of the underlying device technology. The reinventions were catalyzed by the limits of power dissipation and self-heating for the corresponding device technologies. In the 1950s, when the vacuum-tubes reached the power dissipation limits, the more power efficient bipolar transistors took over. In the 1980s, bipolar transistors were replaced by even more power efficient technology based on complementary metal-oxidesemiconductor (CMOS) field-effect transistors (FET). As power consumption, self-heating and scaling considerations threaten the scaling of CMOS at the twilight of Moore's law, it is not surprising that researchers are once again looking for a more scalable and energyefficient replacement, such as tunnel FET 1 , Nano-Electro-Mechanical (NEM)-FET 2 , spin-FET 3 , phase-FET 4 , etc. The negative capacitance field-effect transistor (NC-FET) proposed by Salahuddin and Datta 5 is a recent entry to the list.