Negative capacitance in light-emitting devices

Zhu, C.Y.; Feng, Lin; Wang, C.D.; Cong, H.X.; Zhang, G.Y.; Yang, Zhijian; Chen, Z.Z.

doi:10.1016/j.sse.2009.01.002

Cited by 94 publications

(51 citation statements)

References 12 publications

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“…For example, C-V measurements will show an increase in capacitance with increasing forward bias voltage, which can be quite different at low and moderate frequencies in the depletion and accumulation regions, due to carriers in interface states, the presence of an interfacial insulator layer and the series resistance [4]. Interestingly, an anomalous peak and negative capacitance in the forward bias region have been observed for many electronic devices [5][6][7][8][9][10]. Demet et al found that the negative capacitance of Au/n-GaAs Schottky contacts may be explained by polarization (especially at low frequencies) and the introduction of more carriers to the structure [5].…”

Section: Introductionmentioning

confidence: 99%

“…Temperaturedependent negative capacitance behavior of Al/rhodamine-101/ n-GaAs Schottky diodes has been observed, and it has been explained by the loss of interface charges localized at the MS interface through the impact ionization process [8]. Zhu et al showed that the negative capacitance behavior in light-emitting diodes (LEDs) was highly related to injected carrier recombination in the active region of luminescence [9]. Jones et al attributed the negative capacitance to the relaxation-like nature of the material [10].…”

Section: Introductionmentioning

confidence: 99%

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Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

Kim¹

2016

Transactions on Electrical and Electronic Materials

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Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/ n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

Kim¹

2016

Transactions on Electrical and Electronic Materials

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“…This Phenomenon have attracted a lot of attentions. For example, according to (Zhu et al, 2009), the NC has great relation to injection carriers recombination in the active region in Organic Light Emitting Diodes (OLEDs). While in (El-Kamel et al, 2008) observed NC in hydrogendoped barium titanate films found that this behaviour is related to proton and oxygen vacancy conduction.…”

Section: Introductionmentioning

confidence: 99%

EFFECT OF AMBIENT AIR CONDITIONS ON LOW FREQUENCY NEGATIVE CAPACITANCE OF NC-TIO<sub>2</sub>/P3HT HETEROJUNCTION SOLAR CELLS

Al-Dmour¹

2014

American Journal of Applied Sciences

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We report the negative capacitance of nanocrystalline titanium dioxide/poly (3-hexyl thiophene), nc-TiO 2 /P3HT, heterojunction solar cells. In air, low frequency negative capacitance has been observed under forward bias associated with high values of conductance. Interestingly, the negative capacitance disappear when the device was placed in vacuum chamber. These results are attributed to affect the ambient conditions on the charge carrier concentration in materials used to fabricated solar cells and increase the bulk region resistance.

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“…The observation of NC is important because it implies that an increment of bias voltage produces a decrease in the charge on the electrodes. [4] However, NC has, so far, no meaning to us and the concept of NC is still not widely recognized because of lack of trust in experimental data. [12] Therefore, in many cases experimental NC data were not reported in the literature due to confusion caused by the NC effect.…”

Section: Introductionmentioning

confidence: 99%

“…The N ss and bulk traps formed at M/S interface, where charges can be stored and released when the appropriate forward applied bias and the external a.c. oscillation voltage are applied, strongly affect device performance. [1,2,4,5,11] Although it is believed that the injection of charge carriers involves a process of hopping to localized interface traps, a detailed physical mechanism of injection is not yet understood.…”

Section: Introductionmentioning

confidence: 99%

Temperature‐dependent profile of the surface states and series resistance in (Ni/Au)/ AlGaN/AlN/GaN heterostructures

Taşçıoğlu¹,

Aydemir²,

Şafak³

et al. 2010

Surface & Interface Analysis

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The profile of the interface state densities (N ss ) and series resistances (R s ) effect on capacitance-voltage (C -V) and conductancevoltage (G/ω -V) of (Ni/Au)/Al x Ga 1−x N/AlN/GaN heterostructures as a function of the temperature have been investigated at 1 MHz. The admittance method allows us to obtain the parameters characterizing the metal/semiconductor interface phenomena as well as the bulk phenomena. The method revealed that the density of interface states decreases with increasing temperature. Such a behavior of N ss can be attributed to reordering and restructure of surface charges. The value of series R s decreases with decreasing temperature. This behavior of R s is in obvious disagreement with that reported in the literature. It is found that the N ss and R s of the structure are important parameters that strongly influence the electrical parameters of (Ni/Au)/Al x Ga 1−x N/AlN/GaN(x = 0.22) heterostructures. In addition, in the forward bias region a negative contribution to the capacitance C has been observed, that decreases with the increasing temperature.

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Negative capacitance in light-emitting devices

Cited by 94 publications

References 12 publications

Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

EFFECT OF AMBIENT AIR CONDITIONS ON LOW FREQUENCY NEGATIVE CAPACITANCE OF NC-TIO<sub>2</sub>/P3HT HETEROJUNCTION SOLAR CELLS

Temperature‐dependent profile of the surface states and series resistance in (Ni/Au)/ AlGaN/AlN/GaN heterostructures

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