2014
DOI: 10.1364/oe.22.00a930
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Near-unity broadband absorption designs for semiconducting nanowire arrays via localized radial mode excitation

Abstract: Abstract:We report design methods for achieving near-unity broadband light absorption in sparse nanowire arrays, illustrated by results for visible absorption in GaAs nanowires on Si substrates. Sparse (<5% fill fraction) nanowire arrays achieve near unity absorption at wire resonant wavelengths due to coupling into 'leaky' radial waveguide modes of individual wires and wire-wire scattering processes. From a detailed conceptual development of radial mode resonant absorption, we demonstrate two specific geometr… Show more

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Cited by 96 publications
(94 citation statements)
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References 50 publications
(68 reference statements)
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“…These modes are well-defined and well understood. For nanowire arrays, mode identification is less straight forward, due to the introduction of periodicity; absorption enhancements in nanowire arrays have been attributed to both leaky waveguide modes of individual nanowires [19][20][21][22] and photonic crystal Bloch modes. 12,[23][24][25][26] Previous reports have examined a wide variety of array dimensions, nanowire geometries, and illumination angles, which also exhibit varying dominant mode resonances.…”
Section: Introductionmentioning
confidence: 99%
“…These modes are well-defined and well understood. For nanowire arrays, mode identification is less straight forward, due to the introduction of periodicity; absorption enhancements in nanowire arrays have been attributed to both leaky waveguide modes of individual nanowires [19][20][21][22] and photonic crystal Bloch modes. 12,[23][24][25][26] Previous reports have examined a wide variety of array dimensions, nanowire geometries, and illumination angles, which also exhibit varying dominant mode resonances.…”
Section: Introductionmentioning
confidence: 99%
“…View Article Online allows for a simple approximation of the charge generation term, but is unable to accurately quantify the absorbed radiation in non-planar, heterogeneous, and anisotropic absorbers. 24,25 The radiation absorption analysis has to be adapted to account for scattering effects of bubbles and absorption in the electrolyte if the photoabsorber is covered by electrolyte. 26 Once charge carriers are generated, they need to be transported to the interface of the semiconductor so as to participate in the electrochemical reactions.…”
Section: Processes In the Semiconductormentioning
confidence: 99%
“…These thermal management schemes can be effectively harnessed in catalytically separated and protected photoabsorber devices, where the excess heat from the light-absorption process can be used to enhance the rate of the catalytic processes (29,117). Lastly, radiation management techniques can potentially be used to enhance the radiation absorption in the semiconductor material and increase the STH efficiency (118)(119)(120)(121)(122). These techniques can reduce the use of materials by concentrating the light into the photoactive units of devices, which could result in cost savings for device fabrication.…”
Section: Figurementioning
confidence: 99%