Near-Threshold Computing: Reclaiming Moore's Law Through Energy Efficient Integrated Circuits

Dreslinski, Ron; Wieckowski, Michael; Blaauw, David; Sylvester, Dennis; Mudge, Trevor

doi:10.1109/jproc.2009.2034764

Cited by 725 publications

(418 citation statements)

References 31 publications

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“…The electronic integrated circuits are the hardware backbone of todays information society and the power dissipation has recently become the greatest challenge, affecting the lifetime of existing portable equipments, the sustainability of large and growing in number data centers, and the feasibility of energy autonomous systems for ambience intelligence 1,2 , and of sensor networks for implanted monitoring and actuation medical devices 3 . While the scaling of the supply voltage, V DD , is recognized as the most effective measure to reduce switching power in digital circuits, the performance loss and increased device to device variability are a serious hindrance to the V DD scaling down to 0.5 V or below.…”

Section: Introductionmentioning

confidence: 99%

Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor

Esseni

Snider

et al. 2014

Journal of Applied Physics

101

134

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The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) is proposed and described. The tunneling current is calculated by using a formalism based on the Bardeen's transfer Hamiltonian, and including a semi-classical treatment of scattering and energy broadening effects. The misalignment between the two 2D materials is also studied and found to influence the magnitude of the tunneling current, but have a modest impact on its gate voltage dependence. Our simulation results suggest that the Thin-TFETs can achieve very steep subthreshold swing, whose lower limit is ultimately set by the band tails in the energy gaps of the 2D materials produced by energy broadening. The Thin-TFET is thus very promising as a low voltage, low energy solid state electronic switch. PACS numbers:1 arXiv:1312.2557v1 [cond-mat.mes-hall]

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Section: Introductionmentioning

confidence: 99%

Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor

Esseni

Snider

et al. 2014

Journal of Applied Physics

101

134

View full text Add to dashboard Cite

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“…This approach has been taken recently in low-power (hence low temperature) processor designs such as ARM big.LITTLE processing architecture [97]. Another approach at the platform level is to reduce the operating power supply of the platform to near-threshold values [98]. Near-threshold computing allows the processing units to operate close to the voltage threshold value of the used transistor, hence reducing the overall power and thermal density.…”

Section: Design-time Power and Thermal Optimizationsmentioning

confidence: 99%

Power-Thermal Modeling and Control of Energy-Efficient Servers and Datacenters

Kim

Sabry

Ruggiero

et al. 2015

Handbook on Data Centers

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“…NTV is a new low-power design concept to pursue maximum energy efficiency. NTV operating voltage is set closing to the threshold voltage of MOS transistors, instead of unlimitedly lowering the operating voltage [2].…”

Section: Introductionmentioning

confidence: 99%

Dynamic-static hybrid near-threshold-voltage adder design for ultra-low power applications

Lian

Wey

Peng

et al. 2015

IEICE Electron. Express

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Near-threshold-voltage (NTV) circuit is to set the operating voltage near the threshold voltage of CMOS transistors to pursue the maximum energy efficiency. However, the characteristics for each logic family are quite different under NTV while comparing to its operation under normal supply voltage. In this paper, we proposed a new dynamic-static hybrid near threshold voltage adder design. The proposed keeper design can suppress the leakage current and avoid signal contention in the dynamic CMOS circuit, which lets the dynamic CMOS logic family can be adapted to NTV environment with excellent speed characteristics and higher energy efficiency. The proposed low leakage dynamic-static hybrid NTV 32-bits adder design can achieve the maximum energy efficiency with 161.7% enhancement as compared to the mirror adder under NTV with 0.3 V.

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Near-Threshold Computing: Reclaiming Moore's Law Through Energy Efficient Integrated Circuits

Cited by 725 publications

References 31 publications

Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor

Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor

Power-Thermal Modeling and Control of Energy-Efficient Servers and Datacenters

Dynamic-static hybrid near-threshold-voltage adder design for ultra-low power applications

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