Near-surface layer radiation color centers in lithium fluoride nanocrystals: Luminescence and composition

Войтович, А. П.; Калинов, В. С.; Stupak, A. P.; Новиков, А. Н.; Runets, L. P.

doi:10.1016/j.jlumin.2014.08.012

Cited by 20 publications

(9 citation statements)

References 11 publications

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“…, F S2 , , , and F S3 [10]. These designations of surface color cen ters are similar to traditional designations of color cen ters in the bulk of the crystals.…”

Section: Introductionmentioning

confidence: 55%

“…At close to room temperatures, the aggregation is provided by only the diffusion of anion vacancies (hereinafter, vacancies). The defects in the subsurface layer, unlike the defects in the bulk of the crystal does not diffuse at these temperatures [10]. This fact suggests that the activation energy of the diffusion for these defects in the subsurface layer is significantly higher than in the bulk of the crystal, where it is 1.07 eV [11,12].…”

Section: Introductionmentioning

confidence: 91%

“…FOR THE STUDY OF KINETICS In [10], it was found that, in contrast to the crystal plates, the nanocrystals by the end of irradiation at T irr < T v contained F S2 and aggregate centers. It was also found that in subsurface layers the annealing of nanocrystals is accompanied by the following reac tions involving vacancies v a :…”

Section: Aggregation Of Defects and The Choice Of Reactionsmentioning

confidence: 99%

“…Recently, different types of surface defects were revealed in a subsurface layer of crystals and in LiF nanocrystals, their photoluminescence (PL) and pho toluminescence excitation (PLE) spectra were mea sured, and the compositions were determined [9,10]. The main measurements were performed with nanoc rystals, because they are characterized by an increased content of surface defects as compared to crystals of the same volume under identical irradiation condi tions.…”

Section: Introductionmentioning

confidence: 99%

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Diffusion and aggregation of subsurface radiation defects in lithium fluoride nanocrystals

et al. 2015

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Lithium fluoride nanocrystals were irradiated by gamma rays at a temperature below the temper ature corresponding to the mobility of anion vacancies. The kinetics of the aggregation of radiation induced defects in subsurface layers of nanocrystals during annealing after irradiation was elucidated. The processes that could be used to determine the activation energy of the diffusion of anion vacancies were revealed. The value of this energy in subsurface layers was obtained. For subsurface layers, the concentrations ratio of vacan cies and defects consisting of one vacancy and two electrons was found. The factors responsible for the differ ences in the values of the activation energies and concentration ratios in subsurface layers and in the bulk of the crystals were discussed.

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“…, F S2 , , , and F S3 [10]. These designations of surface color cen ters are similar to traditional designations of color cen ters in the bulk of the crystals.…”

Section: Introductionmentioning

confidence: 55%

Section: Introductionmentioning

confidence: 91%

Section: Aggregation Of Defects and The Choice Of Reactionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Diffusion and aggregation of subsurface radiation defects in lithium fluoride nanocrystals

et al. 2015

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“…Например, по данным [12] поверхностные F 2 -центры имеют спектральную полосу поглощения с максимумом 635 nm (вместо 440 nm) и полосу люминесценции с макси-мумом 770 nm (вместо 680 nm для объемных F 2 -центров). В описанных выше условиях облучения ЦО с характеристиками, присущими объем-ным центрам, под действием электронов вообще не должны появляться.…”

Section: поступило в редакцию 6 декабря 2017 гunclassified

Формирование тонкого люминесцирующего слоя в кристаллах LiF под действием излучения тлеющего разряда

Тютрин¹,

Глазунов²,

Ракевич³

et al. 2018

Письма В Журнал Технической Физики

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Поступило в Редакцию 6 декабря 2017 г.Средствами конфокальной сканирующей люминесцентной микроскопии с вре-менным разрешением методом времякоррелированного счета одиночных фо-тонов исследовано образование тонких слоев люминесцирующих дефектов на гранях плоских образцов кристаллов фторида лития, размещенных в положи-тельном столбе и темном фарадеевом пространстве тлеющего газового разряда. По характеристикам спектров и кинетики люминесценции, возникшей после облучения, установлено, что в поверхностных слоях кристаллов образуются агрегатные центры окраски. Рассмотрена роль электронов, ионов и фотонов газового разряда в механизме дефектообразования. Показано, что дефекты образуются под действием фотонов вакуумного ультрафиолета. Методом тер-мостимулированной люминесценции измерено распределение интенсивности вакуумного ультрафиолетового излучения в разрядном промежутке. Основным источником этого излучения являются области анодного и катодного падения напряжения в тлеющем разряде.

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Nanostructures and Nanocrystals with Radiation Induced Color Centers: Optical Properties and Applications

Montereali¹,

Войтович²

2017

NATO Science for Peace and Security Series B: Physics and Biophysics

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Near-surface layer radiation color centers in lithium fluoride nanocrystals: Luminescence and composition

Cited by 20 publications

References 11 publications

Diffusion and aggregation of subsurface radiation defects in lithium fluoride nanocrystals

Diffusion and aggregation of subsurface radiation defects in lithium fluoride nanocrystals

Формирование тонкого люминесцирующего слоя в кристаллах LiF под действием излучения тлеющего разряда

Nanostructures and Nanocrystals with Radiation Induced Color Centers: Optical Properties and Applications

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