Near–Room Temperature Thermal CVD of SiO2 Films

Senkevich, Jay J.; Desu, Seshu B.

doi:10.1002/(sici)1521-3862(199805)04:03<92::aid-cvde92>3.0.co;2-c

Cited by 8 publications

(3 citation statements)

References 11 publications

(21 reference statements)

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“…476 The above values compare to near room temperature CVD fabricated 25 nm thick films from TEOS having a resistivity =1ϫ 10 13 ⍀ cm and a leakage current density of 1.8ϫ 10 −10 A / cm 2 ͑at 1 MV/ cm͒, and a breakdown field of 7.2 MV/ cm. 477 A metal-insulator-metal diode, where the insulator was fabricated by FEB contamination with a resistivity of =1 ϫ 10 11 ⍀ cm, was shown in Ref. 478.…”

Section: Insulators and Resistorsmentioning

confidence: 99%

Gas-assisted focused electron beam and ion beam processing and fabrication

Utke¹,

Hoffmann²,

Melngailis³

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

945

1,316

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Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. Since the beams can be used to locally alter material at the point where they are incident on a surface, they represent direct nanofabrication tools. The authors will focus here on direct fabrication rather than lithography, which is indirect in that it uses the intermediary of resist. In the case of both ions and electrons, material addition or removal can be achieved using precursor gases. In addition ions can also alter material by sputtering ͑milling͒, by damage, or by implantation. Many material removal and deposition processes employing precursor gases have been developed for numerous practical applications, such as mask repair, circuit restructuring and repair, and sample sectioning. The authors will also discuss structures that are made for research purposes or for demonstration of the processing capabilities. In many cases the minimum dimensions at which these processes can be realized are considerably larger than the beam diameters. The atomic level mechanisms responsible for the precursor gas activation have not been studied in detail in many cases. The authors will review the state of the art and level of understanding of direct ion and electron beam fabrication and point out some of the unsolved problems.

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Section: Insulators and Resistorsmentioning

confidence: 99%

Gas-assisted focused electron beam and ion beam processing and fabrication

Utke¹,

Hoffmann²,

Melngailis³

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

945

1,316

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“…Poly(dichloro- p -xylylene) (PPXD) has a threshold temperature of 130 °C, poly(chloro- p -xylylene) (PPXC) 90 °C, and poly( p -xylylene) (PPXN) 30 °C . Both the deposition of near-room-temperature thermal CVD of SiO 2 and multilayer thin film structures composed of PPXC and SiO 2 have been deposited successfully as reported previously. , However, until now no attempt has been made to deposit a thermal CVD nanocomposite composed of PPXC and SiO 2 .…”

Section: Introductionmentioning

confidence: 81%

Near-Room-Temperature Thermal Chemical Vapor Deposition of Poly(chloro-p-xylylene)/SiO₂ Nanocomposites

Senkevich

Desu

1999

Chem. Mater.

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A great necessity exists to reduce power consumption, cross-talk, and RC delay in ultralarge-scale integration (ULSI) devices to further improve their performance by replacing SiO 2 with a low dielectric constant material. Recently, much work has been focused on chemical vapor deposition (CVD) polymer thin films; however, they often suffer from poor resistance to metal diffusion and undesirable dielectric anisotropy. To overcome these limitations, a thermal CVD nanocomposite consisting of poly(chloro-p-xylylene) (PPXC) and SiO 2 was developed utilizing a recently developed near-room-temperature thermal CVD method to deposit SiO 2 . The composition of the nanocomposite thin films could be varied by increasing the vaporization temperature of the SiO 2 precursor, diacetoxy-di-tert-butoxysilane. Since the composition could be varied, both the index of refraction and the dielectric constant of the nanocomposites could potentially be varied, in situ, to deposit a graded film to eliminate the diffusion problem. The X-ray diffraction spectra show a reduction in the crystallinity of the nanocomposite with increasing weight fraction of SiO 2 compared to the PPXC homopolymer, thus reducing the dielectric anisotropy, resulting in a low in-plane capacitance desirable for ULSI devices. The thermal stability for the high polymer fraction (91%) nanocomposite was also better than that of the PPXC homopolymer at temperatures up to 415 °C after successive low-temperature postdeposition anneals in nitrogen. Microstructural analysis of a high weight fraction polymer nanocomposite, with transmission electron microscopy, revealed a continuous polymer phase with a largely interdispersed morphology on a ∼5-50-nm scale.

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“…One of the simplest approaches is based on the use of focused ionbeam-induced deposition (IBID) with the TEOS precursor [4,14,15]. This method leads to a dramatic decrease of carbon in the deposited material, but unfortunately it results in Ga + ion implantation, which creates an undesired increase in the electrical conductivity in the structures as compared to pure SiO 2 [16]. Other attempts to provide carbon-free silicon dioxides grown from TEOS include post-annealing of the EBID structures [5] and deposition on a heated substrate [13], but neither of these methods leads to a significant purity improvement.…”

Section: Introductionmentioning

confidence: 99%

Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator

et al. 2014

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An oxygen-assisted electron-beam-induced deposition (EBID) process, in which an oxygen flow and the vapor phase of the precursor, tetraethyl orthosilicate (TEOS), are both mixed and delivered through a single needle, is described. The optical properties of the SiO(2+δ) (- 0.04 ≤ δ ≤ +0.28) are comparable to fused silica. The electrical resistivity of both single-needle and double-needle SiO(2+δ) are comparable (greater than 7 GΩ cm) and a measured breakdown field is greater than 400 V μm(-1). Compared to the double-needle process the advantage of the single-needle technique is the ease of alignment and the proximity to the deposition location, which facilitates fabrication of complex 3D structures for nanophotonics, photovoltaics, micro- and nano-electronics applications.

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Near–Room Temperature Thermal CVD of SiO2 Films

Cited by 8 publications

References 11 publications

Gas-assisted focused electron beam and ion beam processing and fabrication

Gas-assisted focused electron beam and ion beam processing and fabrication

Near-Room-Temperature Thermal Chemical Vapor Deposition of Poly(chloro-p-xylylene)/SiO₂ Nanocomposites

Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator

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Near–Room Temperature Thermal CVD of SiO2 Films

Cited by 8 publications

References 11 publications

Gas-assisted focused electron beam and ion beam processing and fabrication

Gas-assisted focused electron beam and ion beam processing and fabrication

Near-Room-Temperature Thermal Chemical Vapor Deposition of Poly(chloro-p-xylylene)/SiO2 Nanocomposites

Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator

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Near-Room-Temperature Thermal Chemical Vapor Deposition of Poly(chloro-p-xylylene)/SiO₂ Nanocomposites