Near-room temperature single-domain epitaxy of reactively sputtered ZnO films

Chamorro‐Coral, William; Horwat, David; Pigeat, P.; Miska, Patrice; Migot, Sylvie; Soldera, F.; Boulet, Pascal; Mücklich, Frank

doi:10.1088/0022-3727/46/23/235107

Cited by 29 publications

(29 citation statements)

References 41 publications

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“…For both positions a near band edge emission is observed in the ultraviolet range with a maximum around 360 nm. In the visible range, point defects can cause a broad emission band [26]. In the present case this emission band has a much lower intensity as compared to the near band edge emission.…”

Section: Optical Electrical and Structural Propertiesmentioning

confidence: 54%

“…The inhomogeneity of the DC sputtered films can be explained by the bombardment with negative oxygen ions during the film growth. As commented in the introduction, oxygen bombardment is effectively believed to lead to the deactivation of the Al dopant [9] and to cause the creation of oxygen interstitials and zinc vacancies that compensate the donor defects [7,26]. The negative oxygen ions originate from the oxidized target surface and are accelerated across the target sheath [31].…”

Section: Optical Electrical and Structural Propertiesmentioning

confidence: 99%

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Room temperature deposition of homogeneous, highly transparent and conductive Al-doped ZnO films by reactive high power impulse magnetron sputtering

Mickan

Helmersson

Rinnert

et al. 2016

Solar Energy Materials and Solar Cells

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Room temperature deposition of homogeneous, highly transparent and conductive Aldoped ZnO films by reactive high power impulse magnetron sputtering, Solar Energy Materials and Solar Cells, 2016. 157, pp.742-749. http://dx. AbstractAluminium doped zinc oxide (AZO) films have been deposited using reactive high power impulse magnetron sputtering (HiPIMS) and reactive direct current (DC) magnetron sputtering from an alloyed target without thermal assistance. These films have been compared in terms of their optical, electrical and structural properties. While both DC and HiPIMS deposited films show comparable transmittance, their electrical properties are significantly improved by the HiPIMS process. The HiPIMS deposited films show a low resistivity down to the order of 10 −4 Ωcm with a good homogeneity across the substrate, making them potential candidates for electrodes in solar cells. The density of electrons reached up to 11 × 10 20 cm −3 , making ionized impurities the main scattering defects. This improvement of the film properties can be related to the specific plasma/target interactions in a HiPIMS discharge. This allows the process to take place in the transition mode and to deposit highly conductive, transparent AZO films on large surfaces at low temperature. While the overall oxygen content is above that of stoichiometric ZnO, higher localization of oxygen is found at the interfaces between crystalline domains with substoichiometric composition.

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Section: Optical Electrical and Structural Propertiesmentioning

confidence: 54%

Section: Optical Electrical and Structural Propertiesmentioning

confidence: 99%

Room temperature deposition of homogeneous, highly transparent and conductive Al-doped ZnO films by reactive high power impulse magnetron sputtering

Mickan

Helmersson

Rinnert

et al. 2016

Solar Energy Materials and Solar Cells

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“…Texture, which describes the statistical distribution of grain orientations, is an important microstructural characteristic of thin films, as it can strongly influence the various functional properties [1][2][3][4][5][6][7][8][9][10]. Four types of texture component have been identified in thin films: random texture, in which the orientations of grains are fully random (no preferred growth orientation); fiber texture [1,11,12], where the orientation of a lattice plane is preferentially parallel to the substrate plane, while there is some rotational degree of freedom around the axis perpendicular to the substrate plane; in-plane texture (epitaxy), in which all three axes of the grains in thin film are aligned and fixed by the crystallographic orientations of single crystal substrates [1,11,13,14];…”

Section: Introductionmentioning

confidence: 99%

Growth, interfacial microstructure and optical properties of NiO thin films with various types of texture

et al. 2019

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NiO thin films with random, fiber and in-plane textures have been successfully deposited at near room temperature by reactive magnetron sputtering on glass, silicon and Al 2 O 3 (0001) substrates. Self-texture related with the deposition conditions and crystallographic characters competes with the driving force from the matched substrate. Such a competition can be used to control the texture of thin films on matched substrates, especially when the promoting orientations from self-texture and substrate are different. Enhancing this competition tends to suppress the selftexture of NiO thin films on Al 2 O 3 (0001) substrates, whereas restricting the competition is beneficial to produce the in-plane textured NiO thin films. In addition, it is found that the optical transmittance of NiO thin films on Al 2 O 3 (0001) substrates can also be tuned by such competition. Interfacial microstructure analyses of NiO thin films on amorphous substrates clearly evidence the existence a nanocomposite layer at the initial growth, which is composed of NiO nanocrystals surrounded by amorphous matrix. In contrast, in-plane textured NiO thin films on Al 2 O 3 (0001) substrates exhibit sharp interface without nanocrystals or amorphous matrix. We believe these results provide a general framework of tuning the textures and properties of thin films on matched substrates.

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“…However, the non‐equilibrium nature of reactive magnetron sputtering process makes the control of the crystallization and the preferred growth orientation more complicated than with other techniques . Several adjustable parameters, such as reactive gas partial pressure, total sputtering pressure, bias voltage, substrate temperature, and substrate nature can be used to tune the crystallization and preferred orientation of reactively sputtered thin films. Among these parameters, the window to control the thin film growth by reactive gas partial pressure or total sputtering pressure is usually narrow .…”

mentioning

confidence: 99%

Local Homoepitaxial Growth in Sputtered NiO Thin Films: An Effective Approach to Tune the Crystallization, Preferred Growth Orientation, and Electrical Properties

Wang

Ghanbaja

Soldera

et al. 2018

Physica Rapid Research Ltrs

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We report the local homoepitaxial growth of NiO thin films with simultaneously tunable crystallization, preferred growth orientation, and electrical properties by reactive sputtering. Using a seed layer with 〈100〉 fiber texture previously deposited on glass and silicon substrates, the room temperature growth of highly 〈100〉‐oriented NiO thin films with good crystallization has been achieved. Microstructure analyses evidence that the columns of the top layer are homoepitaxially grown on the columns of seed one. The resistivity of 〈100〉‐oriented homoepitaxial layer is lower than the seed one and higher than that of single layer of multiple orientations deposited with the same condition.

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Near-room temperature single-domain epitaxy of reactively sputtered ZnO films

Cited by 29 publications

References 41 publications

Room temperature deposition of homogeneous, highly transparent and conductive Al-doped ZnO films by reactive high power impulse magnetron sputtering

Room temperature deposition of homogeneous, highly transparent and conductive Al-doped ZnO films by reactive high power impulse magnetron sputtering

Growth, interfacial microstructure and optical properties of NiO thin films with various types of texture

Local Homoepitaxial Growth in Sputtered NiO Thin Films: An Effective Approach to Tune the Crystallization, Preferred Growth Orientation, and Electrical Properties

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