Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector

Tang, Shiang‐Feng; Lin, Shih‐Yen; Lee, Si‐Chen

doi:10.1063/1.1362201

Cited by 149 publications

(75 citation statements)

References 8 publications

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“…third generation solar cells [30,31], light emitting diodes [32,33], quantum information processing [25], or infrared photo detectors [34][35][36] among others. The ICEC process first described in atoms was found to be also present in QDs [3].…”

Section: Dr2013mentioning

confidence: 99%

Interatomic Coulombic electron capture in atomic, molecular, and quantum dot systems

Bande

Pont

Gokhberg

et al. 2015

EPJ Web of Conferences

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Abstract. The interatomic Coulombic electron capture (ICEC) process has recently been predicted theoretically for clusters of atoms and molecules. For an atom A capturing an electron e( ) it competes with the well known photorecombination, because in an environment of neutral or anionic neighboring atoms B, A can transfer its excess energy in the ultrafast ICEC process to B which is then ionized. The cross section for e( ) + A + B → A − + B + + e( ) has been obtained in an asymptotic approximation based on scattering theory for several clusters [1,2]. It was found that ICEC starts dominating the PR for distances among participating species of nanometers and lower. Therefore, we believe that the ICEC process might be of importance in the atmosphere, in biological systems, plasmas, or in nanostructured materials. As an example for the latter, ICEC has been investigated by means of electron dynamics in a model potential for semiconductor double quantum dots (QDs) [3]. In the simplest case one QD captures an electron while the outgoing electron is emitted from the other. The reaction probability for this process was found to be relatively large.

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Section: Dr2013mentioning

confidence: 99%

Interatomic Coulombic electron capture in atomic, molecular, and quantum dot systems

Bande

Pont

Gokhberg

et al. 2015

EPJ Web of Conferences

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“…The IR photoresponse of InAs dots embedded in GaAs was investigated very recently 1,2,3,4,5,6,7,8,9 and transition energies between the dot ground state and the GaAs conduction band were found in the 100-400 meV range. Depending on the dot potential shape and the doping level, photodetection can even be extended into the region below 100 meV 21,22 .…”

Section: Introductionmentioning

confidence: 99%

“…InAs quantum dots (QDs) embedded in GaAs quantum well structures have initiated considerable research activities in the recent years 1,2,3,4,5,6,7,8,9,10,11,12,13,14 . The interest in QDs is mainly based on the favorable energy spacing of their bound electronic states and the great potential to adjust these properties.…”

Section: Introductionmentioning

confidence: 99%

Intraband transitions in quantum dot–superlattice heterostructures

et al. 2005

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By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self organized InAs quantum dots into an AlAs/GaAs superlattice enables us to tune the optical transition energy by changing the superlattice period as well as by changing the growth conditions of the dots. Using a one band envelope function framework we are able, in a fully three dimensional calculation, to predict the photocurrent spectra of these devices as well as their polarization properties. The calculations further predict a strong impact of the dots on the superlattices minibands. The impact of vertical dot alignment or misalignment on the absorption properties of this dot/superlattice structure is investigated. The observed photocurrent spectra of vertically coupled quantum dot stacks show very good agreement with the calculations.In these experiments, vertically coupled quantum dot stacks show the best performance in the desired photodetector application.

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“…There have been indeed several studies of photo-detectors based on InAs QDs (see e.g., [33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49][50])…”

Section: Photo-detectionmentioning

confidence: 99%

Unbound states in quantum heterostructures

Ferreira¹,

Bastard²

2006

Nanoscale Res Lett

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We report in this review on the electronic continuum states of semiconductor Quantum Wells and Quantum Dots and highlight the decisive part played by the virtual bound states in the optical properties of these structures. The two particles continuum states of Quantum Dots control the decoherence of the excited electron -hole states. The part played by Auger scattering in Quantum Dots is also discussed.

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Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector

Cited by 149 publications

References 8 publications

Interatomic Coulombic electron capture in atomic, molecular, and quantum dot systems

Interatomic Coulombic electron capture in atomic, molecular, and quantum dot systems

Intraband transitions in quantum dot–superlattice heterostructures

Unbound states in quantum heterostructures

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