2014
DOI: 10.1007/s10853-014-8391-0
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Near infrared nonlinearity in silver telluride-core/carbon-sheath and tellurium-core/carbon-sheath nanostructures synthesized by reduction carbonization approach

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Cited by 5 publications
(4 citation statements)
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“…[1][2][3]. In addition, Te nanomaterials can be transformed to functional nanocompound by reacting with the other elements [4][5][6][7][8][9][10], which made fabrication of Te nanostructures become a hot research field, such as nanobelts, nanowires, nanotubes, and nanorods [11][12][13]. Nowadays, many methods were used to fabricate Te nanostructures, including physical vapor deposition [14], reflux [15], microwaveassisted method [15], surfactant-assisted approach [16], and solvothermal or hydrothermal methods [17].…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3]. In addition, Te nanomaterials can be transformed to functional nanocompound by reacting with the other elements [4][5][6][7][8][9][10], which made fabrication of Te nanostructures become a hot research field, such as nanobelts, nanowires, nanotubes, and nanorods [11][12][13]. Nowadays, many methods were used to fabricate Te nanostructures, including physical vapor deposition [14], reflux [15], microwaveassisted method [15], surfactant-assisted approach [16], and solvothermal or hydrothermal methods [17].…”
Section: Introductionmentioning
confidence: 99%
“…Among them, Ag 2 Te and Ag 7 Te 4 are thermally stable at room temperature . Ag 2 Te is a narrow-band gap semiconductor (i.e., E g of ∼ 0.2 eV) that has drawn considerable attention due to its wide applications in electronic, optical, magnetic, and thermoelectric devices. Especially for the thermoelectric application, the material possesses many unique advantages such as (1) low thermal conductivity (close to the amorphous limit value) due to the vibration of the Te 2– sublattices and the collision between randomly distributed Ag + ion and Te 2– sublattices; , (2) high electron mobility due to its low effective mass and thereby high electrical conductivity; (3) tunable carrier concentration by doping; and (4) a reversible crystal phase transition from the low-temperature monoclinic structure (β-Ag 2 Te) to the high-temperature fcc structure (α-Ag 2 Te) at about 403 to 423 K . The β-Ag 2 Te is a narrow band gap semiconductor with high electron mobility and low lattice thermal conductivity, whereas the α-Ag 2 Te is a superionic conductor because Ag + cations can easily move through the tellurium anion sublattices .…”
Section: Introductionmentioning
confidence: 99%
“…Compared with initial Te NWs, the larger diameter of newly formed broken NWs can be attributed to a morphological evolution from the Te NWs to broken NWs. The formation of the broken NWs likely reflects relaxation of the strong mechanical stress in the galvanic replacement reaction. …”
Section: Resultsmentioning
confidence: 99%