Near‐Infrared Light‐Emitting Ambipolar Organic Field‐Effect Transistors

Smits, Edsger C. P.; Setayesh, Sepas; Anthopoulos, Thomas D.; Buechel, Michael; Nijssen, W. P. M.; Coehoorn, R.; Blom, Paul W. M.; Boer, Bart de; Leeuw, Dago M. de

doi:10.1002/adma.200600999

Cited by 142 publications

(104 citation statements)

References 24 publications

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“…相对于独立的酞菁钌化合物和 SQ 分子而言, SQ 3 的吸收光谱更宽 [24] . 然而以 SQ 3:PCBM 为活性层的本体异质结 OPV 器件却表现出较低的 PCE, 只有约 0.3%, 这主要由于活性层材料较低的载流子迁移率导致了器件电荷传输能力较低, 致使器件短路电流密度只有 1.65 mA cm -2 , 且填充因子小于 30%(表 1) [25] . 通过分子设计降低给体材料的 HOMO 能级进而获得较高的开路电压也是一种实现高效 OPV 器件的有效途径.…”

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Progress of Organic Photovoltaic Cells Based on Squaraine Small Molecule Donors and Fullerene Acceptors

Si¹,

Guo²,

Wei³

2016

Chin. J. Org. Chem.

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Squaraine (SQ) small molecules have been considered as efficient photoactive materials for organic photovoltaic (OPV) cells due to their simple synthetic routes, high absorption coefficients with tunable bandgaps and bandwidths in the visible-near infrared region, as well as high photochemical and thermal stabilities. The SQ donor and fullerene acceptor based OPV devices have realized the power conversion efficiencies of over 8%. In this paper, the progress of SQ donor and fullerene acceptor based OPV cells is reviewed, the effect of molecular structure, molecular aggregation and film morphology on the device performance is systematically summarized. The applied field of SQ donors in OPV cells is widened, and some proposals for future study are also given.

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Progress of Organic Photovoltaic Cells Based on Squaraine Small Molecule Donors and Fullerene Acceptors

Si¹,

Guo²,

Wei³

2016

Chin. J. Org. Chem.

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“…In recent years ambipolar transport has been exploited in organic field-effect transistors ͑OFETs͒ for the fabrication of complementarylike logic circuits [1][2][3][4][5] and bifunctional devices such as lightemitting OFETs. [6][7][8][9] The majority of ambipolar organic transistors demonstrated so far are based on bulk heterojunction systems where an electron transporting ͑n-channel͒ material is mixed/blended with a hole transporting ͑p-channel͒ one, either through solution blending 1,2 or thermal coevaporation, 8 to form the heterogeneous ambipolar semiconductive layer. Bilayer-type ambipolar organic transistors based on the p / n heterostructure concept have also been demonstrated.…”

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confidence: 99%

“…10 Realization of ambipolar organic OFETs based on a single semiconductor, on the other hand, has been proven to be much more difficult mainly due to the poor environmental stability of the n-channel operation. 1,5,9,11,12 Only recently single component air-stable ambipolar OFETs and logic circuits have been demonstrated. 4,13 In these studies the near infrared absorbing dithiolene derivative bis ͓4-dimethylaminodithiobenzyl͔-nickel was employed as the semiconductor layer.…”

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confidence: 99%

Air-stable ambipolar organic transistors

Anthopoulos

Anyfantis

Papavassiliou

et al. 2007

Applied Physics Letters

201

174

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The authors report on ambipolar organic transistors based on the soluble dithiolene derivative ͑diphenylethylenedithiolato͒͑1,3-dithiol-2-thione-4,5-dithiolato͒nickel ͓Ni͑dpedt͒͑dmit͔͒. Due to its small band gap, efficient injection of holes and electrons from gold source/drain electrodes is possible. Both carrier mobilities are estimated to be approximately equal with maximum value on the order of 10 −4 cm 2 / V s. The transistors exhibit excellent ambient stability with a shelve lifetime exceeding 3 months. The pronounced stability of Ni͑dpedt͒͑dmit͒ as well as of several other molecules studied here is correlated to their redox potential. The present findings can be used as a general guide towards design and synthesis of air-stable ambipolar/n-channel molecules.

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“…[11][12][13][14] Charge transport models are also required for ambipolar transistors, particularly in the case of ambipolar light emitting transistors. [15][16][17][18] Here, electrons and holes are injected from opposite sides of the channel using a single type of source and drain electrodes. When the recombination rate is infinite, the device is described as a discrete p-type and n-type transistor in series.…”

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confidence: 99%

Unified description of potential profiles and electrical transport in unipolar and ambipolar organic field-effect transistors

et al. 2007

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Validation of models for charge transport in organic transistors is fundamentally important for their technological use. Usually current-voltage measurements are performed to investigate organic transistors. In situ scanning Kelvin probe microscopy measurements provide a powerful complementary technique to distinguish between models based on band and hopping transports. We perform combined current-voltage and Kelvin probe microscopy measurements on unipolar and ambipolar organic field-effect transistors. We demonstrate that by this combination we can stringently test these two different transport models and come up with a unified description of charge transport in disordered organic semiconductors.

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Near‐Infrared Light‐Emitting Ambipolar Organic Field‐Effect Transistors

Cited by 142 publications

References 24 publications

Progress of Organic Photovoltaic Cells Based on Squaraine Small Molecule Donors and Fullerene Acceptors

Progress of Organic Photovoltaic Cells Based on Squaraine Small Molecule Donors and Fullerene Acceptors

Air-stable ambipolar organic transistors

Unified description of potential profiles and electrical transport in unipolar and ambipolar organic field-effect transistors

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