Near infrared detectors based on HgSe and HgCdSe quantum dots generated at the liquid–liquid interface

Jana, Manoj K.; Chithaiah, Pallellappa; Murali, Banavoth; Krupanidhi, S. B.; Biswas, Kanishka; Rao, C. N. R.

doi:10.1039/c3tc31344a

Cited by 37 publications

(40 citation statements)

References 21 publications

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“…[36] However, the spectral coverage of TiO2 encapsulated MoS2 devices is limited to the visible-near infrared range determined by the band gap of the multilayer MoS2 (Figure 2d). HgTe CQD detectors demonstrate fast photoresponse with decay time of less than 4 ms, limited by the measurement system resolution, but with very low responsivity in accordance with prior reports [22][23][24][25][26][27][28] ( Figure 2d). On the other hand, the hybrid phototransistors demonstrate the combined features of speedy response of HgTe QD photodetectors with high gain across the VIS-SWIR (Figure 2d) following the absorption spectrum of HgTe QDs.…”

supporting

confidence: 64%

“…[11] HgSe and HgTe colloidal quantum dots, in particular, have been considered for IR detection due to their small, tunable bandgap through the full infrared spectrum [12][13][14][15][16] with very favourable optical properties. [13][14][15][16][17][18][19][20][21] Photoconductive detectors based on those QDs have also been reported based on spin-coating, spray-casting or inkjet-printing techniques on integrated electrode structures. [12,[22][23][24][25][26][27][28] The responsivity in those prior reports, however, has been limited to tens of mA/W due to the low carrier mobility, lack of sensitizing centers and the consequent absence of photoconductive gain in contrast to what has been extensively reported in PbS-based CQD photoconductors.…”

mentioning

confidence: 99%

“…[13][14][15][16][17][18][19][20][21] Photoconductive detectors based on those QDs have also been reported based on spin-coating, spray-casting or inkjet-printing techniques on integrated electrode structures. [12,[22][23][24][25][26][27][28] The responsivity in those prior reports, however, has been limited to tens of mA/W due to the low carrier mobility, lack of sensitizing centers and the consequent absence of photoconductive gain in contrast to what has been extensively reported in PbS-based CQD photoconductors. [6,11] Recently, with the advent of 2D materials, the combination of graphene or semiconducting transition metal dichalcogenides (TMDs) with quantum dots in phototransistor architectures have led to new records of gain and sensitivity.…”

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confidence: 99%

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MoS₂–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm

2017

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Mercury telluride (HgTe) colloidal quantum dots (CQDs) have been developed as promising materials for the short and mid-wave infrared photodetection applications because of their low cost, solution processing and size tunable absorption in the short wave-and midinfrared spectrum. However, the low mobility and poor photo-gain have limited the responsivity of HgTe CQDs-based photodetectors to only tens of mA/W. Here, we integrated HgTe CQDs on a TiO2 encapsulated MoS2 transistor channel to form hybrid phototransistors with high responsivity of ~10 6 A/W, the highest reported to date for HgTe QDs. By operating the phototransistor in the depletion regime enabled by the gate modulated current of MoS2, the noise current is significantly suppressed leading to an experimentally measured specific detectivity D* of ~10 12Jones at a wavelength of 2 µm. This work demonstrates for the first time the potential of the hybrid 2D/QD detector technology in reaching out to wavelengths beyond 2 µm with compelling sensitivity.

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confidence: 64%

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confidence: 99%

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MoS₂–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm

2017

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“…The D* can be expressed as44: Where S is the effective area under illumination. SNR is defined by the following equation48: LDR is given by the following equation49: Where J Light is the photocurrent density with a light intensity of 1 mWcm −2 , J Dark is the dark current density.…”

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confidence: 99%

PIN architecture for ultrasensitive organic thin film photoconductors

Jin

Wang

2014

Sci Rep

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Organic thin film photoconductors (OTFPs) are expected to have wide applications in the field of optical communications, artificial vision and biomedical sensing due to their great advantages of high flexibility and low-cost large-area fabrication. However, their performances are not satisfactory at present: the value of responsivity (R), the parameter that measures the sensitivity of a photoconductor to light, is below 1 AW−1. We believe such poor performance is resulted from an intrinsic self-limited effect of present bare blend based device structure. Here we designed a PIN architecture for OTFPs, the PIN device exhibits a significantly improved high R value of 96.5 AW−1. The PIN architecture and the performance the PIN device shows here should represent an important step in the development of OTFPs.

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“…Mercury selenide (HgSe) is known as important materials for near infrared detectors [13], thin-film transistors [14], etc. To the best of our knowledge, the photocatalytic properties of HgSe have not been studied hitherto.…”

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confidence: 99%