1995
DOI: 10.1002/pssa.2211520126
|View full text |Cite
|
Sign up to set email alerts
|

Near-field scanning optical microscopy and spectroscopy for semiconductor characterization

Abstract: The applicability of near‐field scanning optical microscopy (NSOM) for optical characterization of semiconductors is discussed. The NSOM technique and some of its properties relevant to real‐time in‐situ measurements are reviewed. Several optical characterization methods widely used in the far‐field, including reflectance, reflectance‐difference spectroscopy, Raman spectroscopy, ellipsometry, and carrier lifetime, are evaluated for their use with NSOM. Experimental data are included for some of these methods. … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

0
14
0

Year Published

1998
1998
2019
2019

Publication Types

Select...
5
3

Relationship

2
6

Authors

Journals

citations
Cited by 24 publications
(14 citation statements)
references
References 14 publications
0
14
0
Order By: Relevance
“…This leads to new selection rules for surface‐enhanced Raman spectroscopy (SERS) (e.g. see Moskovits, 1985; Creighton, 1988 and references therein), and also to differences between far‐ and near‐field Raman spectroscopy measured with a near‐field optical microscope (Hallen et al. , 1995; Ayars et al ., 2000).…”
Section: Introductionmentioning
confidence: 91%
“…This leads to new selection rules for surface‐enhanced Raman spectroscopy (SERS) (e.g. see Moskovits, 1985; Creighton, 1988 and references therein), and also to differences between far‐ and near‐field Raman spectroscopy measured with a near‐field optical microscope (Hallen et al. , 1995; Ayars et al ., 2000).…”
Section: Introductionmentioning
confidence: 91%
“…Such a line would have the same symmetry as that in the discussion above, although the above 783 cm -1 line is found in many studies and is reported as 'strong,' a criterion common to many of the lines observed in the signal-starved NSOM-Raman. A fairly strong peak at 716 cm -1 has previously been observed in NSOM-Raman with the probe close to the surface, [3,4] but no distance dependent measurements were made. This peak can be explained [20] by the coupling through the electric field gradient to the strong IR absorption line at 712 cm -1 .…”
mentioning
confidence: 87%
“…Plasmonic resonances generate a tightly confined electric field around metallic (e.g., Au and Ag) or semi‐metallic (e.g., graphene) structures . The near‐field mapping of such electric field distributions is the key to understanding the fundamentals of plasmonics . In general, the near‐field scanning optical microscope (NSOM), which relies on a tip‐based enhancement of the scattering, has been a standard in this regard .…”
Section: Photochromic‐isomerization‐induced Directional Mass Migratimentioning
confidence: 99%
“…In general, the near‐field scanning optical microscope (NSOM), which relies on a tip‐based enhancement of the scattering, has been a standard in this regard . However, a conventional NSOM is limited to a mapping of the intensity rather than the field direction and is also plagued by both its requirement for a complicated optical setup and its vulnerability to subtle vibrations . The directional mass migration of azomaterials acts as an alternative route to address the above‐mentioned drawbacks of the conventional NSOM .…”
Section: Photochromic‐isomerization‐induced Directional Mass Migratimentioning
confidence: 99%