Near-field optical mapping of the ion-implanted patterns fabricated in amorphous silicon carbide

Takahashi, Satoshi; Zayats, Anatoly V.; Dawson, Paul; Turner, Robert; Bischoff, L.; Angelov, O.; Dimova‐Malinovska, D.

doi:10.1016/j.vacuum.2005.02.002

Cited by 19 publications

(27 citation statements)

References 19 publications

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“…The obtained optical patterns in a-SiC:H by high--energy focused He + ion beams are the first known result of registering such patterns based mainly on the electronic stopping mechanism in the implanted films [14,15], unlike the two previous known cases where heavy ions induced radiation defects [7][8][9] or chemical modification mechanisms [10][11][12][13] were shown to define the process. Therefore, studying the patterns in detail by near--field techniques, like AFM and SNOM, are expected to supply details of the ion beam induced modification processes and further elucidate the mechanism of the ob- • are shown in Fig.…”

Section: Resultsmentioning

confidence: 86%

“…The custom-built scanning near-field optical microscope was used to study the changes in the local absorption of the irradiated (patterned) areas as compared to the non-irradiated ones. The details of the SNOM measurements are described in our previous work [11,12]. Briefly, an unpolarized beam from a He-Ne laser (633 nm) illuminates the substrate side of the sample.…”

Section: Methodsmentioning

confidence: 99%

“…Recently, using the emerging technology of ion micro-beams [7], promising results have been obtained for the possible application of thin a-SiC:H films in high-density archival data storage [8,9]. This approach has been further developed by implementing ion doping with focused ion beam (FIB) systems that use Ga + or other chemically active ion species [10][11][12][13]. Still another approach of obtaining optical contrast in a-SiC:H films, suitable for such applications, is the use of high-energy (MeV) focused ion beams via structural modification of the irradiated film material [14,15].…”

Section: Introductionmentioning

confidence: 99%

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Optical Pattern Fabrication in Amorphous Silicon Carbide with High-Energy Focused Ion Beams

et al. 2011

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Topographic and optical patterns have been fabricated in a-SiC films with a focused high-energy (1 MeV) H + and He + ion beam and examined with near-field techniques. The patterns have been characterized with atomic force microscopy and scanning near-field optical microscopy to reveal local topography and optical absorption changes as a result of the focused high-energy ion beam induced modification. Apart of a considerable thickness change (thinning tendency), which has been observed in the ion-irradiated areas, the near-field measurements confirm increases of optical absorption in these areas. Although the size of the fabricated optical patterns is in the micron-scale, the present development of the technique allows in principle writing optical patterns up to the nanoscale (several tens of nanometers). The observed values of the optical contrast modulation are sufficient to justify the efficiency of the method for optical data recording using high-energy focused ion beams.

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Section: Resultsmentioning

confidence: 86%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optical Pattern Fabrication in Amorphous Silicon Carbide with High-Energy Focused Ion Beams

et al. 2011

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“…Other important factors which make the films an attractive material for coatings include a smooth surface and low friction, thermal stability and transparency over a wide spectral range. These properties also offer advantages as compared to another wide optical bandgap material -silicon carbide (SiC) -for uses in nanoscale optical data recording for archival information storage using focused ion beams (FIB) techniques, where SiC thin films found useful applications recently [10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

“…In the case of hydrogenated amorphous silicon carbide (aSiC:H) films, computer operated FIB systems are used to both introduce irradiation defects and additionally chemically modify the amorphous structure of the films, thus reducing their optical bandgap in even a more effective manner for the useful creation of optical contrast between implanted and non-implanted areas of the film material for applications in nanoscale optical data recording [13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Ion Beam Induced Surface Modification of ta-C Thin Films

et al. 2017

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Thin film samples (d ≈ 40 nm) of tetrahedral amorphous carbon (ta-C), deposited by filtered cathodic vacuum arc, were implanted with Ga + at ion energy E = 20 keV and ion fluences D = 3 × 10 14 −3 × 10 15 cm −2 and N + with the same energy and ion fluence D = 3 × 10 14 cm −2 . The Ga + ion beam induced surface structural modification of the implanted material, displayed by formation of new phase at non-equilibrium condition, which could be accompanied by considerable changes in the optical properties of the ta-C films. The N + implantation also results in modification of the surface structure. The induced structural modification of the implanted material results in a considerable change of its topography and optical properties. Nanoscale topography and structural properties characterisation of the Ga + and N + implanted films were performed using atomic spectroscopy analysis. The observed considerable surface structural properties modification in the case of the higher fluence Ga + implanted samples results from the relatively high concentration of introduced Ga + atoms, which is of the order of those for the host element.

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Modification of the Optical and Structural Properties of a-Si1-XCX:H Films by Ion Implantation

Dimova‐Malinovska

2006

Functional Properties of Nanostructured Materials

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Near-field optical mapping of the ion-implanted patterns fabricated in amorphous silicon carbide

Cited by 19 publications

References 19 publications

Optical Pattern Fabrication in Amorphous Silicon Carbide with High-Energy Focused Ion Beams

Optical Pattern Fabrication in Amorphous Silicon Carbide with High-Energy Focused Ion Beams

Ion Beam Induced Surface Modification of ta-C Thin Films

Modification of the Optical and Structural Properties of a-Si1-XCX:H Films by Ion Implantation

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