Near-Field nanoscopy of current-induced excess noise in graphene

Lin, Kuan-Ting; Weng, Qianchun; Nema, Hirofumi; Kim, S.; Sugawara, Kazuo; Otsuji, T.; Komiyama, S.; Kajihara, Yusuke

doi:10.1109/irmmw-thz.2017.8067243

Cited by 1 publication

(1 citation statement)

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“…The s-SNOM has been utilized to identify noise distribution [191]. Lin et al fabricated a graphene device with a narrow channel of 700 nm [192]. At a bias voltage of 1 V, the distribution of evanescent signal is recorded and concentrated in the narrow channel demonstrated by s-SNOM.…”

Section: Scattering-type Scanning Near-field Optical Microscopementioning

confidence: 99%

Recent progress and challenges on two-dimensional material photodetectors from the perspective of advanced characterization technologies

Zhong

Wang

et al. 2020

Nano Res.

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Atomically thin two-dimensional (2D) materials exhibit enormous potential in photodetectors because of novel and extraordinary properties, such as passivated surfaces, tunable bandgaps, and high mobility. High-performance photodetectors based on 2D materials have been fabricated for broadband, position, polarization-sensitive detection, and large-area array imaging. However, the current performance of 2D material photodetectors is not outstanding enough, including response speed, detectivity, and so forth. The way to further promote the development of 2D material photodetectors and their corresponding practical applications is still a tremendous challenge. In this article, these issues of 2D material photodetectors are analyzed and expected to be solved by combining micro-nano characterization technologies. The inherent physical properties of 2D materials and photodetectors can be accurately characterized by Raman spectroscopy, transmission electron microscopy (TEM), and scattering scanning near-field optical microscope (s-SNOM). In particular, the precise probe of lattice defects, doping concentration, and near-field light absorption characteristics can promote the researches of low-noise and high-responsivity photodetectors. Scanning photocurrent microscope (SPCM) can show the overall spatial distribution of photocurrent and analyze the mechanism of photocurrent. Photoluminescence (PL) spectroscopy and Kelvin probe force microscope (KPFM) can characterize the material bandgap, work function distribution and interlayer coupling characteristics, making it possible to design high-performance photodetectors through energy band engineering. These advanced characterization techniques cover the entire process from material growth, to device preparation, and to performance analysis, and systematically reveal the development status of 2D material photodetectors. Finally, the prospects and challenges are discussed to promote the application of 2D material photodetectors.

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Section: Scattering-type Scanning Near-field Optical Microscopementioning

confidence: 99%