Near bulk-limited R0A of long-wavelength infrared type-II InAs∕GaSb superlattice photodiodes with polyimide surface passivation

Hood, Andrew; Delaunay, Pierre Yves; Hoffman, Darin; Nguyen, Binh Minh; Wei, Yajun; Razeghi, Manijeh; Nathan, V.

doi:10.1063/1.2747172

Cited by 92 publications

(45 citation statements)

References 14 publications

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“…Using this property, a double heterostructure that prevents the inversion of the high band gap p-type and n-type superlattice contact regions has been proposed with low--temperature ion-sputtered SiO 2 passivation [47]. Passivation with polyimide has also proved very effective [48].…”

Section: Type-ii Superlatticesmentioning

confidence: 99%

Infrared Detectors for the Future

Rogalski

2009

Acta Phys. Pol. A

124

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In the paper, fundamental and technological issues associated with the development and exploitation of the most advanced infrared detector technologies are discussed. In this class of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys on silicon, type-II superlattices, uncooled thermal bolometers, and novel uncooled micromechanical cantilever detectors. Despite serious competition from alternative technologies and slower progress than expected, HgCdTe is unlikely to be seriously challenged for high-performance applications, applications requiring multispectral capability and fast response. However, the nonuniformity is a serious problem in the case of LWIR and VLWIR HgCdTe detectors. In this context, it is predicted that type-II superlattice system seems to be an alternative to HgCdTe in long wavelength spectral region. In well established uncooled imaging, VO x microbolometer arrays are clearly the most used technology. In spite of successful commercialization of uncooled microbolometers, the infrared community is still searching for a platform for thermal imagers that combine affordability, convenience of operation, and excellent performance. Recent advances in microelectromechanical systems have led to the development of uncooled IR detectors operating as micromechanical thermal detectors. Between them the most important are biomaterial microcantilevers.

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Section: Type-ii Superlatticesmentioning

confidence: 99%

Infrared Detectors for the Future

Rogalski

2009

Acta Phys. Pol. A

124

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“…For this structure, an effective passivation is low-temperature, ion-sputtered SiO 2 passivation [62]. Passivation with polyimide has also proved very effective [63].…”

Section: Superlattice Photodiodesmentioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed.Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs).In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

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“…This limits the device performance to surface effects. Many research groups have developed stable and band-gap insensitive passivation and encapsulation processes to diminish surface leakage currents [7][8][9][10].…”

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confidence: 99%

Heterostructure engineering in Type II InAs/GaSb strained layer superlattices

Myers

Plis

Kim

et al. 2010

Phys. Status Solidi (c)

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The background carrier concentration is an important factor in the performance of detectors. We have investigated the effect of a variable background doping concentration in the absorber region of an nBn type‐II InAs/GaSb superlattice infrared detector. The doping concentrations were 5 × 1016 cm‐3 (non‐intentionally doped, n.i.d.), 1.4 × 1017 cm‐3, 4.0 × 1017 cm‐3, and 3.5 × 1018 cm‐3. The specific detectivity of the detectors was found to dramatically decrease as the doping concentration was increased. This was caused by an increase in dark current density which is attributed to the presence of a quantum well (QW) formed in the valence band. This QW allowed for enhanced electron‐hole recombination at higher doping concentrations. Consequently the n.i.d. device demonstrated the best performance with a zero bias specific detectivity (D*) equal to 1.2 × 1011 Jones at 77 K. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Near bulk-limited R0A of long-wavelength infrared type-II InAs∕GaSb superlattice photodiodes with polyimide surface passivation

Cited by 92 publications

References 14 publications

Infrared Detectors for the Future

Infrared Detectors for the Future

New material systems for third generation infrared photodetectors

Heterostructure engineering in Type II InAs/GaSb strained layer superlattices

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