Since Bi-based superconductors were discovered by Maeda et al. 1 interest in large-scale technical applications and scientific research has increased significantly. BiSrCaCuO (BSCCO) high-temperature superconductor contains three phases with the general formula Bi 2 Sr 2 Ca n−1 Cu n O 2n+4+δ .Here n = 1 (Bi-2201), 2 (Bi-2212), and 3 (Bi-2223) represent the number of CuO 2 layers and have critical temperatures of 20, 85, and 110 K, respectively. 1,2 Bi-2223 compound is preferred over others because of its high critical temperature (T c ). Researchers have made great efforts to improve the key properties of this compound, such as its transition temperature, magnetic field carrying capacity, and high critical current density. 3 The biggest obstacle to the use of this compound in applications is weak intergranular bonds and poor flux pinning ability. Different methods such as adding impurity phases, 4-6 ion irradiation column defects, 7,8 point defects caused by oxygen deficiency, 9 to prevent hysteresis chemical substitution or magnetic nanoparticle addition, 10-13 etc. in order to increase the pinning characteristic of Bi-2223. It is a well-known method to create defects with various irradiations in the material to improve the superconducting properties of Bi-2223. These particles disrupt the crystal lattice of the material and create effective pinning centers that increase the critical current density of the Bi-2223 superconductor. [14][15][16][17][18][19] In a study reported by Zhao et al. 15 it was observed that the zero resistance temperatures (T zero c ) of Bi-based bulk superconducting materials exposed to gamma irradiation at certain intensities and durations first increased slightly and then gradually decreased. The authors stated that there are two reasons for this behavior to occur with gamma irradiation. The first one is the increase in the T zero c as a result of the energy gap becoming higher than normal state by linking the excited electrons and holes to the superconducting carriers. Then, the reason for the decrease in T zero c is