NbN-Based Microwave Kinetic Inductance Detector with a Rewound Spiral Resonator for Broadband Terahertz Detection

Ariyoshi, Seiichiro; Nakajima, Kensuke; Saito, Atsushi; Taino, Tohru; Tanoue, H.; Koga, Katsumi; Furukawa, Noboru; Yamada, H.; Ohshima, Shigetoshi; Otani, Chiko; Bae, Jongsuck

doi:10.7567/apex.6.064103

Cited by 14 publications

(6 citation statements)

References 19 publications

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“…Niobium nitride is widely adopted in the manufacturing of superconducting nanoelectronic devices of various functionalities, such as single-photon detectors SNSPD [1][2], hot-electron bolometers (HEB) and mixers of THz frequency range [3], microwave kinetic inductance detectors (MKIDs) [4], etc. Thin NbN films are produced using various techniques, such as reactive magnetron sputtering with Nb target in Ar and N 2 [5] gas mixture, pulsed laser deposition (PLD) [6], high-temperature chemical vapor deposition (HTCVD), and atomic layer deposition (ALD) [7] [8].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer

Porokhov¹,

Sirotina²,

Першина³

et al. 2021

Supercond. Sci. Technol.

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The influence of the buffer layer of hafnia dielectric (HfO 2 ) on superconducting properties of niobium nitride films (NbN), produced by the technique of the reactive magnetron depositing has been investigated for the first time. This study presents a comprehensive analysis of morphological, microstructural, and electrophysical parameters of thin NbN films. The dependence of transition critical temperature from the thickness of the HfO 2 buffer layer has been obtained. For the first time, it has been demonstrated that the superconducting properties of niobium nitride films at the HfO 2 buffer layer have high superconductive parameters, namely, Т c ~ 13 K (at the film thickness of approximately 30 nm) and high critical current density of approximately 10 7 A/cm 2 . The relation between the thickness of the HfO 2 buffer layer with the critical current density of niobium nitride films has been determined. It appeared that the values of critical current density increase significantly up to 13 MA/cm 2 when the thickness of the hafnia buffer layer is more than 2 nm.

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Section: Introductionmentioning

confidence: 99%

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer

Porokhov¹,

Sirotina²,

Першина³

et al. 2021

Supercond. Sci. Technol.

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“…We have focused on a DFSS that simultaneously acts as a small microwave resonator with high Q U and a wide-band THz antenna with high gain [7].…”

Section: Introductionmentioning

confidence: 99%

Relationship Between Loaded Quality Factor and Responsivity for NbN-Based MKIDs Using Dual-Function Spiral Strip

Saito

Nakajima

Hayashi

et al. 2015

IEEE Trans. Appl. Supercond.

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We investigated the relationship between loaded quality factor (Q L ) and responsivity of microwave kinetic inductance detectors (MKIDs) using a dual-function spiral strip (DFSS). Three types of DFSSs with different Q L values were designed, and the S 21 properties were simulated when kinetic inductance of a superconductor was changed by using a 2.5-dimentional simulator. The simulated results showed that a very high Q L value was not necessarily required. The resonator frequencies of the 25-MKID array using a better type of DFSS (Q L ∼ 3500) were adjusted to be separated by 5 MHz around 2.0 GHz. The 25-MKID array were fabricated using 20-nm thick niobium nitride films deposited on r-plane sapphire substrates. We clearly observed 25 half-wavelength resonances around 2.0 GHz at 2.245 K. The optical responses were also confirmed using hot and cold radiation. The dependence of the responsivity on the Q L indicated that the Q L value of approximately 2000 could obtain higher responsivity.Index Terms-Array, dual-function spiral strip (DFSS), microwave, microwave kinetic inductance detector (MKID), THz.

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“…Therefore, they have been widely investigated for THz detector applications [1], [2] or circuits operating around 10 K [3].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of NbTiN Tunnel Junctions Using Hf Overlayers

Munemoto

Sakamoto

Akaike

et al. 2015

2015 15th International Superconductive Electronics Conference (ISEC)

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We have fabricated NbTiN tunnel junctions by introducing a Hf overlayer to a junction barrier layer. Two types of junctions consisting of NbTiN/Hf/Al-AlN x /NbTiN and NbTiN/Hf-HfO x /NbTiN were fabricated on thermally oxidized Si substrates. The electrical characteristics for junctions with various thickness of the Hf layer were evaluated at 4.2 K and compared. The results indicated that the diffusion of nitrogen from the base NbTiN layer into the normal layer was suppressed. In addition, the normal coherence length in the Hf layer was estimated to be about 13 nm.

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NbN-Based Microwave Kinetic Inductance Detector with a Rewound Spiral Resonator for Broadband Terahertz Detection

Cited by 14 publications

References 19 publications

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer

Relationship Between Loaded Quality Factor and Responsivity for NbN-Based MKIDs Using Dual-Function Spiral Strip

Fabrication of NbTiN Tunnel Junctions Using Hf Overlayers

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NbN-Based Microwave Kinetic Inductance Detector with a Rewound Spiral Resonator for Broadband Terahertz Detection

Cited by 14 publications

References 19 publications

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO2 buffer layer

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO2 buffer layer

Relationship Between Loaded Quality Factor and Responsivity for NbN-Based MKIDs Using Dual-Function Spiral Strip

Fabrication of NbTiN Tunnel Junctions Using Hf Overlayers

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Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer

Investigation of the superconducting properties of NbN films deposited by DC magnetron sputtering on a high-k dielectric HfO₂ buffer layer