Native Oxidation Growth on Ge(111) and (100) Surfaces

Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience

“…On the other hand, the growth of Ge oxide on Ge(100) at over 490º C is faster than that on (111) as shown in Figure 2. The faster oxidation rate of Ge(100) is presumably caused by the larger atomic atom space than oxygen molecule as discussed in previous report [12]. In addition, the Ge oxide thickness was exponentially increased with the oxidation time over 10 min, which confirmed there was a rectilinear relation in the log-log plot for both surface orientations.…”

Stability of Chlorine Termination on Ge(100) and Ge(111) Surfaces

“…In contrast, the oxidation on Si (100) in clean room air is faster compared to that of in dry oxygen ambient. The longer plateau region of Si oxidation is thought caused by the higher strain at Si/SiO 2 interface compare to Ge/GeO 2 interface [20]. To get insight into chemical bonding structure, Ge3d 5/2 spectra was measured.…”

“…Furthermore, various chemical-based methods have been explored to passivate Ge substrate prior to high-k deposition such as sulfur passivation, halogen passivation, and hydrogen passivation [14][15][16][17][18][19]. Though, the oxygen free was not yet obtained on Ge surface and the kinetics oxidation of Ge is quite fast compared to Si oxidation [20][21]. It is may be due to the lower thermal and chemical stability of Ge hydrides compared to Si hydrides [22].…”

Retrieval of the complex-valued refractive index of germanium near the M4,5 absorption edge

“…In Ref. [29] it was found that the oxide of Ge grows by less than 1 nm during one day, which minimizes possible surface contamination that could affect the measured refractive index.…”