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2019 IEEE Radiation Effects Data Workshop 2019
DOI: 10.1109/redw.2019.8906647
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NASA Goddard Space Flight Center’s Compendium of Total Ionizing Dose, Displacement Damage Dose, and Single-Event Effects Test Results

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Cited by 4 publications
(2 citation statements)
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“…Testing on power MOSFETs indicates varying levels of resistance to TID, SEB, and SEGR [140]. Results from [103] reveal further details about the hardness to radiation of trench power MOSFETs, which exhibit SEBs with variation in failure thresholds even between identical parts.…”
Section: Fetsmentioning
confidence: 91%
“…Testing on power MOSFETs indicates varying levels of resistance to TID, SEB, and SEGR [140]. Results from [103] reveal further details about the hardness to radiation of trench power MOSFETs, which exhibit SEBs with variation in failure thresholds even between identical parts.…”
Section: Fetsmentioning
confidence: 91%
“…The MBT2222 (dual NPN) from ON Semiconductor and MMBT2907 (single PNP) from Diodes Incorporated were chosen based on total ionizing dose (TID) performance of at least 10 krad accumulated dose before parameters deviated beyond manufacturer specification [20], [21]. A dual N-channel MOSFET, BSS138, also manufactured by Diodes Incorporated, was chosen based on the demonstrated TID tolerances [22] and heavy ion performance [23] for the BSS1xx family of power MOSFETs.…”
Section: Hardware Implementation and Characterizationmentioning
confidence: 99%