Narrow width effects in CMOS n(p)-well resistors

A 3-terminal model for diffused and ion-implanted resistors

“…T HE ELECTRICAL behavior of integrated (diffused and ion-implanted) resistors depends nonlinearly on geometry, temperature and bias [1]- [3]. The temperature dependence is caused by the change with temperature both of mobility and of the built-in potential, and hence depletion width, of the junction between the resistor body and the tub or substrate.…”