Narrow-stripe selective growth of high-quality MQWs by atmospheric-pressure MOVPE

Mori, Koichi; Hatakeyama, H.; Hamamoto, Kiichi; Komatsu, K.; Sasaki, T.; Matsumoto, Takashi

doi:10.1016/s0022-0248(98)00635-6

Cited by 14 publications

(7 citation statements)

References 12 publications

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“…As for the narrow stripe selective MOVPE, the window region is narrower than that of the conventional selective MOVPE, such as 5 µm or less. This method can be used to form active or passive optical waveguides directly without any subsequent etching process, which can result in flat (1 1 1)B planes growth and low propagation loss [6]. For this reason, much effort has been made to fabricate InGaAsP based optical devices using narrow stripe selective MOVPE [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE

Wu¹,

Pan²,

Wang³

et al. 2007

J. Phys. D: Appl. Phys.

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Fabrication of InGaAlAs MQW buried heterostructure (BH) lasers by narrow stripe selective MOVPE is demonstrated in this paper. High quality InGaAlAs MQWs were first grown by narrow stripe selective MOVPE without any etching process and assessed by analysing the cross sections and PL spectrums of the InGaAlAs MQWs. Furthermore, BHs were fabricated for the InGaAlAs MQW lasers by a developed unselective regrowth method, instead of conventional selective regrowth. The InGaAlAs MQW BH lasers exhibit good device characteristics, with a high internal differential quantum efficiency of 85% and a low internal loss of 6.7 cm−1. Meanwhile, narrow divergence angles of the far field pattern are obtained for the fabricated lasers.

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Section: Introductionmentioning

confidence: 99%

Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE

Wu¹,

Pan²,

Wang³

et al. 2007

J. Phys. D: Appl. Phys.

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“…The narrow stripe selective MOVPE performed on window regions that are about 2 µm wide has some further advantages. It can be used to form active or passive optical waveguides directly without any subsequent etching process, which results in flat (111)B planes and low propagation loss [7]. Moreover, the narrow stripe selective growth of waveguides containing aluminium species, just like AlGaInAs but with better temperature and modulation properties [8], has the special merit that fabricating the waveguides without the etching process resolves the oxidation problem that occurs in the traditional etching process of AlGaInAs waveguides [2,4].…”

Section: Introductionmentioning

confidence: 99%

Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact

Choi

Kim

et al. 2006

jjap

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We have performed a narrow stripe selective growth of oxide-free AlGaInAs waveguides on InP substrates patterned with pairs of SiO 2 mask stripes under optimized growth conditions. The mask stripe width varied from 0 to 40 µm, while the window region width between a pair of mask stripes was fixed at 1.5, 2.5 or 3.5 µm. Flat and smooth AlGaInAs waveguides covered by specific InP layers are successfully grown on substrates patterned with different mask designs. The thickness enhancement ratio and the photoluminescence (PL) spectrum of the AlGaInAs narrow stripe waveguides are strongly dependent on the mask stripe width and the window region width. In particular, a large PL wavelength shift of 79 nm and a PL FWHM of less than 64 meV are obtained simultaneously with a small mask stripe width varying from 0 to 40 µm when the window region width is 1.5 µm. We present some possible interpretations of the experimental observations in considering both the migration effect from a masked region and the lateral vapour diffusion effect.

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“…The pressure range under investigation is typically limited to small excursions (o100 Torr) in the low-pressure MOVPE regime [7,8]. In different studies, a completely different reactor was used to compare low pressure to atmospheric pressure results [9,10]. Using a CCS reactor, it is possible to vary the reactor pressure over a much larger range than traditional reactor geometries, and still retain acceptable uniformity.…”

Section: Introductionmentioning

confidence: 99%

The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor

Forbes

Corbett

Hansen

et al. 2004

Journal of Crystal Growth

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Narrow-stripe selective growth of high-quality MQWs by atmospheric-pressure MOVPE

Cited by 14 publications

References 12 publications

Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE

Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE

Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact

The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor

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