Narrow-linewidth short-pulse III-V-on-silicon mode-locked lasers based on a linear and ring cavity geometry

Abstract

Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended cavity geometries are presented. In passive modelocked operation a 12 kHz -3dB linewidth of the fundamental RF tone at 4.7 GHz is obtained for the linear cavity geometry and 16 kHz for the ring cavity geometry. Stabilization of the repetition rate of these devices using hybrid mode-locking is also demonstrated.

Ka-band to L-band frequency down-conversion based on III–V-on-silicon photonic integrated circuits

“…From the spectrum we can clearly see that the laser generates a pure beat note at 15.584 GHz and the 31.168 GHz, corresponding to the repetition rate of the mode-locked laser and the first harmonic. A more detailed description of the operation principle and performance of this type of mode-locked lasers can be found in [9]. …”

“…Excellent agreement between simulation and measurement is found. For the simulation mode-locked laser pulses with a FWHM of 3 ps are assumed, as was measured for an identical device with different repetition rate [9]. The EDFAs were modeled using the standard VPI model.…”

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

“…In this section we will discuss three different MLL geometries studied in our work. The first demonstrations were based on classical colliding ring cavity and linear cavity arrangements [41] as shown in Figure 11a,b. Further improvement of the output power and RF spectral purity was achieved with a novel anti-colliding pulse MLL design [42] as shown in Figure 11c.…”

“…In each case, the length of the cavity is designed to reach a repetition rate of 5 GHz. Details about the device processing can be found in [41,42]. To induce passive mode-locking, the gain section was biased at 160 mA and the SA was reverse biased at −1.2 V for the colliding linear cavity design, 179 mA and −1.3 V for the ring design and 61 mA and −0.7 V for the anti-colliding pulse geometry.…”

III–V-on-silicon photonic integrated circuits for communication and sensing applications

“…High performance lasers can be realized because of the low linear and nonlinear losses of silicon waveguides. Classical colliding pulse devices have been implemented including ring-cavity and Fabry-Perot cavity arrangements [2]. On the III-V-on-silicon platform we also implemented an anticolliding pulse type mode-locked laser structure as shown in Fig.…”