Narrow Linewidth DFB Lasers Emitting Near a Wavelength of 1064 nm

Spießberger, Stefan; Schiemangk, Max; Wicht, Andreas; Wenzel, H.; Brox, O.; Erbert, G.

doi:10.1109/jlt.2010.2056913

Cited by 56 publications

(31 citation statements)

References 21 publications

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“…The experimental RF spectra can be approximated as having a Voigt profile, which is a convolution of Lorentzian and Gaussian lineshapes. The Lorentzian contribution is due to spontaneous emission and describes the intrinsic linewidth of the laser itself [6]. The Gaussian part is due to technical noise and is attributed to mechanical vibrations, temperature fluctuations and injection current noise.…”

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confidence: 99%

Narrow linewidth laterally-coupled 1.55 [micro sign]m DFB lasers fabricated using nanoimprint lithography

et al. 2011

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A report is presented on the use of nanoimprint lithography for the fabrication of InP-based laterally-coupled ridge waveguide distributed feedback laser (DFB) diodes emitting around 1550 nm. At room temperature the uncoated lasers exhibited a sidemode suppression ratio of 50 dB at an output power of 6 mW. The lasers showed extremely pure singlemode spectrum with the Lorentzian part of the measured linewidth being 200 kHz. The results prove that nanoimprint lithography is suitable for the low-cost manufacturing of high performance singlemode laser diodes.Introduction: Conventional distributed feedback (DFB) lasers make use of buried Bragg gratings for achieving selective optical feedback. They require epitaxial regrowth [1], which complicates the fabrication process and can degrade device performance. Another possibility to implement the distributed feedback is to etch lateral gratings on the surface of the device enabling a regrowth-free process [2]. Typically, such surface gratings have been realised by means of electron-beam lithography. We have recently devised an approach to process high aspect-ratio surface gratings using nanoimprint lithography (NIL) and plasma etching [3]. The method consists in defining a laterally-corrugated ridge waveguide (LC-RWG) structure, in a single step, by using a cost-effective and high-throughput soft stamp UV-NIL technology. With this method a full wafer can be patterned in a few minutes at an extremely high resolution. The soft and flexible stamp accommodates locally to micro-particle presence [3] and enables large area imprinting even for wafer surfaces with curvatures caused by the internal strain of the epitaxial layers. This fabrication technique is easily applicable to different material systems; we have used it before for GaAs [3,4] and GaSb [5]. In this Letter, we present results of the first InP-based LC-RWG DFB lasers based on UV-NIL.

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confidence: 99%

Narrow linewidth laterally-coupled 1.55 [micro sign]m DFB lasers fabricated using nanoimprint lithography

et al. 2011

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“…Other parameters are as follows: C is the acceptor with concentration N a =210 18 cm -3 ; (L x :L y :L z )=(0.2m:20m:350m); T=293K; R 1 =1; ground for deriving (5) for different types of lasers it is possible to ascertain qualitative generality of the obtained simulation results of Fabry-Perot lasers for other types of lasers. It allows us to explain the behavior of all known experimental measurements of semiconductor laser natural linewidth which have a minimum [1][2][3][4][5][6][7][8] within the framework of our theoretical optical model with phenomenological parameters (n 1, n 2 ,β) for calculation of the natural linewidth. 2.…”

Section: Interpretation Of Experimentsmentioning

confidence: 99%

“…2. We can explain the minimum of experimental function  =F(1/ P ) [1][2][3][4][5][6][7][8], basing on the formulas (5) -(7) derived. The influence of phase perturbations of spontaneous radiation on  decreases with the growth of power (see (6) for P A ).…”

Section: Interpretation Of Experimentsmentioning

confidence: 99%

“…Measurements of natural linewidth for high power lasers: GaInAs/GaInAsP (SCH), (QW), (DFB LDs) lasers [1], gain-guided V-groove laser and oxide stripe laser [2], DFB Lasers [3][4][5], VCSEL laser [6], microcavity laser [7] and Fabry-Perot lasers [8][9][10] have shown various functional deviations from Schawlow-Townes formula [11] for natural linewidth  for one mode   =S 0 ·(1/ P ), (1) where S 0 =const, P is output power. Additional account of amplitude perturbations in semiconductor lasers [12] yielded the same modified formula (1) in which S 0 was changed to account for amplitude fluctuations.…”

Section: Introductionmentioning

confidence: 99%

“…Various mechanisms, explaining occurrence of the contribution independent of output power at linewidth have been offered in the papers [9,13,14]. But the mechanisms proposed cannot explain minimum of experimental function  =F(1/ P ) [1][2][3][4][5][6][7][8]. Thus, it is possible to ascertain that understanding and description of experiments correspond to a review conclusion [14]: "in the questions, concerning linewidth and mechanisms defining it, there are a lot of unclear".…”

Section: Introductionmentioning

confidence: 99%

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Simulation of natural linewidth and line form for semiconductor lasers; Interpretation of experiments

Noppe

2012

2012 IEEE 11th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)

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Monolithically Integrated Extended Cavity Diode Laser with 32 kHz 3 dB Linewidth Emitting at 1064 nm

Wenzel

Brox

Casa

et al. 2022

Laser & Photonics Reviews

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The spectral linewidth of semiconductor lasers is a crucial performance parameter in a growing number of applications. A common method to improve the coherence of the laser relies on increasing the optical cavity length by an extended section without gain material. Here, this extended cavity diode laser (ECDL) concept is realized in a monolithic device at 1064 nm wavelength. This is accomplished by applying a two‐step epitaxy in the aluminum gallium arsenide material system to selectively remove the active layers in a specific section of the chip. The extended passive section decreases the 3 dB linewidth to 32 kHz at 1 ms integration time. A direct comparison between the performance of the monolithic ECDL and a distributed Bragg reflector laser from the same wafer demonstrates the feasibility of the approach. The results in terms of frequency noise, side mode suppression ratio, injection current threshold, and slope efficiency show that the passive section reduces the laser linewidth while the additional interfaces within the laser cavity created by the manufacturing process do not deteriorate the electro‐optical properties or frequency stability. This opens the possibility for the realization of gallium arsenide based photonic integrated circuits by monolithically combining active and low‐loss passive waveguides.

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Narrow Linewidth DFB Lasers Emitting Near a Wavelength of 1064 nm

Cited by 56 publications

References 21 publications

Narrow linewidth laterally-coupled 1.55 [micro sign]m DFB lasers fabricated using nanoimprint lithography

Narrow linewidth laterally-coupled 1.55 [micro sign]m DFB lasers fabricated using nanoimprint lithography

Simulation of natural linewidth and line form for semiconductor lasers; Interpretation of experiments

Monolithically Integrated Extended Cavity Diode Laser with 32 kHz 3 dB Linewidth Emitting at 1064 nm

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