Monolithically Integrated Extended Cavity Diode Laser with 32 kHz 3 dB Linewidth Emitting at 1064 nm

Wenzel, S.; Brox, O.; Casa, Pietro Della; Wenzel, H.; Arar, Bassem; Kreutzmann, Sabrina; Weyers, M.; Knigge, Andrea; Wicht, Andreas; Tränkle, G.

doi:10.1002/lpor.202200442

Cited by 6 publications

(3 citation statements)

References 24 publications

(29 reference statements)

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“…Almost all free carriers come from the cladding layer. In order to reduce the free-carrier loss [27], the waveguide layer thickness could be increased to minimize the overlap integral between the optical field and the cladding layer. However, the leakage loss is directly proportional to the waveguide thickness [28,29].…”

Section: Laser Design Simulation and Fabricationmentioning

confidence: 99%

A 1083 nm Narrow-Linewidth DFB Semiconductor Laser for Quantum Magnetometry

Wang

et al. 2023

Photonics

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A 1083 nm laser, corresponding to a characteristic spectral line of 3He 23S1−–23P, is the core light source for spin-exchange optical pumping-free technology, and thus has important developmental significance. In this paper, precise wavelength 1083.34 nm semiconductor lasers with 285 mW output power, −144.73 dBc/Hz RIN noise and 30.9952 kHz linewidth have been successfully achieved via reasonable chips design, high-quality epitaxial growth process and ultra-low reflectivity coating fabrication. All the results show the highest output power and ultra-narrow linewidth of the single-frequency 1083 nm DFB semiconductor laser achieved in this paper, which can fully satisfy the requirement of quantum magnetometers.

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Section: Laser Design Simulation and Fabricationmentioning

confidence: 99%

A 1083 nm Narrow-Linewidth DFB Semiconductor Laser for Quantum Magnetometry

Wang

et al. 2023

Photonics

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“…Recently, ECDL has been implemented on a single GaAs chip as a monolithic ECDL (mECDL). 6 Such a device requires a two-step epitaxy technology 7−9 to form an active region and a low-loss passive region.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Ultra-narrow linewidth diode lasers are the main components of cold-atom quantum computers, optical atomic clocks, and atom interferometry-based quantum sensors. , To satisfy the requirements for compactness, robustness, electro-optical efficiency, and low noise, extended cavity diode lasers (ECDLs) are used. − The ECDL type provides lower frequency noise of the emission with its low-loss extended cavity. Recently, ECDL has been implemented on a single GaAs chip as a monolithic ECDL (mECDL) . Such a device requires a two-step epitaxy technology − to form an active region and a low-loss passive region.…”

Section: Introductionmentioning

confidence: 99%

Data-Efficient Machine Learning Algorithms for the Design of Surface Bragg Gratings

Mahani,

Rahimof,

Wenzel

et al. 2023

ACS Appl. Opt. Mater.

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Deep learning models, with a prerequisite of large databases, are common approaches in applying machine learning for inverse design in photonics. For these models, less expensive, approximate methods are usually used to generate large databases, which limit their applications. In this study, we compare the performance of data-efficient machine learning (ML) models for predicting the characteristics of surface Bragg gratings in semiconductor ridge waveguides. We employ the 3D finite-difference time-domain method which is very accurate but time-consuming to generate a database. We analyze the performance of different ML models including support vector regression and extreme gradient boosting (XGBoost) on our limited data. We show that the XGBoost significantly outperforms other models on a smaller database. Our results pave the way for the data-efficient design of integrated photonic components with accurate but time-demanding simulations.

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