Narrow linewidth DBR laser based on high order Bragg grating defined by i-line lithography

Chen, Hong; Jia, Ping; Chen, Chao; Q, Li; Chen, Yongyi; Huang, Yuewang; Wang, Lijun

doi:10.1016/j.optcom.2019.03.062

Cited by 14 publications

(3 citation statements)

References 16 publications

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“…In fact, to the best of our knowledge, DFB, DBR laser diodes, as well as VCSEL, are not commercially available in the blue spectral region coinciding with the strong absorption cross-section of NO 2 gas molecule. [11][12][13][14][15][16][17][18] The approach to ensure single-mode emission from the blue Fabry-Perot laser diode consists of modifying the resonator by extending the normal laser cavity. This is achieved by adding a frequency-selective element, such as a diffraction grating, placed outside the laser diode cavity.…”

Section: Introductionmentioning

confidence: 99%

Littrow configuration tunable external cavity diode laser with narrowband emission at 448 nm

Gasmi,

Aljalal,

Al-Basheer

2024

Semiconductor Lasers and Laser Dynamics XI

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A single-mode external cavity diode laser (ECDL) emitting in the blue spectral region is developed. The ECDL, which uses a low-power Fabry-Perot laser diode, is designed in the Littrow configuration using a reflective holographic grating. The ECDL has a narrowband emission at 448 nm of 0.01 nm that coincides with a strong absorption cross-section of NO 2 gas molecule, tuning ranges of 4.0 nm just above the threshold and 0.2 nm at high injection current. A maximum output power of 60 mW and an efficiency of 80 % with respect to the Fabry-Perot laser diode in free-running condition are achieved. High stability of the laser system over many hours was also achieved with a fluctuation of less than 1 %.

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Section: Introductionmentioning

confidence: 99%

Littrow configuration tunable external cavity diode laser with narrowband emission at 448 nm

Gasmi,

Aljalal,

Al-Basheer

2024

Semiconductor Lasers and Laser Dynamics XI

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“…Semiconductor lasers are used in a wide range of applications, such as sensors [1], space laser communications [2], precision measurements [3], pumped solid-state lasers [4], and fiber lasers [5]. There are many types of grating semiconductor lasers, including first-order distributed feedback (DFB) lasers [6,7], first-order distributed Bragg reflector (DBR) lasers [8,9], surface-emitting DFB semiconductor lasers [10,11], surface high-order grating lasers [12,13], and so on. DFB lasers, * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Sensing strategy based on random slot semiconductor laser

Jia¹,

Wang²,

Liu³

et al. 2023

Laser Phys.

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A photonic sensor based on a random slot surface-emitting semiconductor laser is theoretically demonstrated by utilizing multi-order diffraction. The results show that the variation of far-field local speckles at single wavelength lasing can be utilized to confirm the refractive index of the substances and the flow velocity of erythrocytes in capillaries. The similarity of the intensity contrast is the other protocol to measure the flow velocity of erythrocytes. Additionally, the similarity of the spectral contrast at multiple wavelengths lasing can be used to determine the concentration of erythrocytes in capillaries. The random slot semiconductor laser may provide a new and flexible platform for versatile active sensing.

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“…In 2019, Chen et al designed a DBR laser with output power of 9.9 mW and ultra-narrow linewidth of 70 kHz. [12] In 2020, Zhou et al designed forty-nine-order Bragg grating to achieve 3-nm linewidth of FWHM. [13] But few previous studies of DBR laser diodes focused on the improvement of lateral mode emission.…”

Section: Introductionmentioning

confidence: 99%

Lateral characteristics improvements of DBR laser diode with tapered Bragg grating

Wang¹,

Li²,

Fan³

et al. 2022

Chinese Phys. B

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Broad area semiconductor lasers (BAL) have poor lateral beam quality due to lateral mode competition, which limits its application as a high-power optical source. The paper presents the study and results of distributed Bragg reflector laser diode with tapered grating (TDBR-LD). By introducing variation in lateral width, the tapered grating increases the loss of high-order lateral modes, thus improving the lateral characteristics of the laser diode. The measuring results show that the TDBR-LD can achieve single-lobe output under 0.9A. In contrast to straight distributed Bragg reflector laser diode (SDBR-LD), the lateral far field divergence of TDBR-LD was measured to be 5.23° at 1A, representing a 17% decline. The linewidth of TDBR-LD is 0.4nm at 0.2A, which is reduced by nearly 43% compared with that of SDBR-LD. Meanwhile, both of the devices have a maximum output power of approximate 470mW.

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Narrow linewidth DBR laser based on high order Bragg grating defined by i-line lithography

Cited by 14 publications

References 16 publications

Littrow configuration tunable external cavity diode laser with narrowband emission at 448 nm

Littrow configuration tunable external cavity diode laser with narrowband emission at 448 nm

Sensing strategy based on random slot semiconductor laser

Lateral characteristics improvements of DBR laser diode with tapered Bragg grating

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