Narrow-gap semiconductor magnetic-field sensors and applications

Heremans, Joseph P.; Partin, D. L.; Thrush, C. M.; Green, L

doi:10.1088/0268-1242/8/1s/093

Cited by 80 publications

(33 citation statements)

References 24 publications

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“…Indium Antimonide (InSb) is a binary III-V compound with the highest mobility at room temperature, and thus it is the best material available for magnetic-field sensing devices such as Hall sensors and magnetoresistors [1], speed -sensitive sensors [2], millimeter wave devices [3] and magnetic sensors [4]. Many reports are available on the growth of InSb thin films using techniques such as molecular beam epitaxy (MBE) [5], metalorganic chemical vapour deposition (MOCVD) [6] and vacuum evaporation [7].…”

Section: Introductionmentioning

confidence: 99%

Influence of substrate temperature on the properties of vacuum evaporated InSb films

Senthilkumar

Venkatachalam

Viswanathan

et al. 2005

Cryst. Res. Technol.

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Indium Antimonide (InSb) thin films were grown onto well cleaned glass substrates at different substrate temperatures (303, 373 and 473 K) by vacuum evaporation. The elemental composition of the deposited InSb film was found to be 52.9 % (In) and 47.1 % (Sb). X-ray diffraction studies confirm the polycrystallinity of the films and the films show preferential orientation along the (111) plane. The particle size (D), dislocation density (δ) and strain (ε) were evaluated. The particle size increases with the increase of substrate temperature, which was found to be in the range from 22.36 to 32.59 nm. In Laser Raman study, the presence of longitudinal mode (LO) confirms that the deposited films were having the crystalline nature. Raman peak located at 191.26 cm -1 shift towards the lower frequencies and narrows with increase in deposition temperature. This indicates that the crystallinity is improved in the films deposited at higher substrate temperatures. Hall measurements indicate that the films were p-type, having carrier concentration ≅ 10 16 cm -3and mobility (4 -7.7) ×10 3 cm 2 /Vs. It is observed that the carrier concentration (N) decreases and the Hall mobility (µ) increases with the increase of substrate temperature.

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Section: Introductionmentioning

confidence: 99%

Influence of substrate temperature on the properties of vacuum evaporated InSb films

Senthilkumar

Venkatachalam

Viswanathan

et al. 2005

Cryst. Res. Technol.

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“…Antimonide compound semiconductor materials, such as InSb, are ideal candidates to fabricate magnetoresistors [198], infrared detectors [192], and high-speed devices [193,194] due to their smallest band gap among all III-V semiconductors, highest bulk electron mobility [199], largest Land' eg-factor [200], and strong spin-orbit interaction. Furthermore, according to the theoretical studies on thermoelectric properties of III-V semiconductors, InSb is also considered to be the best choice for thermoelectric applications due to its small effective mass [201,202].…”

Section: Inas/inp/insb Heterostructured Nwsmentioning

confidence: 99%

Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

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introduced by Wagner and Ellis in the 1960's to grow Si submicrosize whiskers [2]. Although Si nanowires are useful, particular their easy incorporation with mature Si technology, which makes products cheap and suitable for mass production, the indirect band gap of Si is hindering the application of this material in many fields where direct band gap is essential, such as optoelectronics. In this regard, III-V compound semiconductors are dominating due to their direct band gap and flexibility in band gap and lattice engineering. In the early 1990s, Scientists from Hitachi employed the VLS approach to grow III-V nanowires [3,4]. At that time, good position and orientation control was achieved as well as the demonstration of the first p-n junctions based on heterostructured nanowires [5]. These novel one-dimensional (1D) III-V nanostructures provide a good model system for investigating the dependence of electronic transport, optical, and mechanical properties on their confinement effects. They demonstrated the potential of these nanowires in the next-generation integrated circuits and functional devices, such as field-effect transistors [6−8], single-electron transistors [9], light-emitting devices [10], chemical sensors [11−14], and THz detectors [15].The control of NW growth is considered to be one of the key points and the foundation of successful NW-based device fabrication. The benefit of NWs is that due to their small radial dimension and the large aspect ratio, the strain in axial heterostructures induced by the lattice mismatch can be relaxed within a small region close to the interface. Therefore, there is virtually no limitation in the choice of materials by the requirement of lattice-matching.Another benefit of III-V semiconductor NWs is that by carefully choosing substrates, the growth of NWs can be self-assembled, and as-grown epitaxial NWs are free-standing. Additionally, by employing nanoscale lithography techniques, e.g., electron beam lithography, it is possible to realize the growth of NWs on pre-patterned substrates [16−20].ABSTRACT In this paper, we present a review about recent progress on the growth of III-V semiconductor homo-and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/ V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.

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“…[1][2][3][4][5][6] It has led to the evolution not only in small Hall components used in video cassette recorders (VCR), optical drives but also household electrical appliance and car industry. 7 Furthermore, InSb has high expectation in high resolution radiation detectors. 8 InSb thin films can be fabricated with many preparation methods.…”

Section: Introductionmentioning

confidence: 99%