Narrow‐Band QD‐Enhanced PIN Metal‐Oxide Heterostructure Phototransistor with the Assistance of Printing Processes

Abstract

Infrared (IR) phototransistors are important building blocks for the true integration of flat‐panel optoelectronic detectors. Although significant progress is made in obtaining an InGaZnO active layer with IR response, the utilization of a high‐performance detector still has many challenges due to low efficiency, high power consumption, and lagging detection speed. Herein, a positive‐intrinsic‐negative (PIN) heterostructure phototransistor directly modulating the charges' transfer barrier with low power consumption (1 nW), high efficiency (EQE > 700%), a 200 Hz detecting bandwidth, and high detectivity (1 × 1011 cm Hz1/2 W−1) at an IR wavelength (1.5 µm in the high‐frequency circumstance) is demonstrated. These excellent sensing properties of the PIN phototransistor, together with its advantages of low power consumption and versatility, make the use of a heterostructure a powerful strategy for the development of on‐chip optoelectronic detectors.

New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors

“…Owing to the low value of I GS (as shown in Figure S8), the energy consumption caused by the leakage current is neglected here. ,, The corresponding power consumption values are only 2.16 nW, 3.51 nW, 11.96 nW, 2.83 nW, and 0.019 nW, demonstrating the low-power-consumption photodetectors realized by adopting the fresh and easy-to-handle NW SGT. Figure e shows the power consumption of photodetectors working in the unsaturated and saturated regions in the literature. ,,,− , Obviously, the power consumption of the as-constructed SGT photodetector in this work is far below that of the reported photodetectors worked in the saturated region.…”

“…Because the carrier density of channel semiconductors can be modulated by both electrical gating and incident photon, the phototransistor is attracting many attentions in the past decades, exhibiting high photoconductive gain, detectivity ( D * ), and responsivity ( R I , defined by photocurrent). − After the success in high R I and D* , it is urgent to reduce the power consumption of as-constructed phototransistor for further large-scale photodetection and imaging applications. , Because of the built-in electrical field, the heterostructure phototransistor can work in a low driving drain voltage ( V DS ), which is considered to be a promising road to reduce power consumption. , Apart from the construction of the heterostructure, the fresh and easy-to-handle source-gated transistor (SGT) also shows low saturated voltage ( V SAT ), promising a low-power-consumption phototransistor. A SGT is typically realized by introducing a source barrier between channel and electrode, exhibiting ultrahigh gain, immunity to the short-channel effect, and lower power consumption. − The drain current ( I DS ) will rapidly increase with the increase of V DS at a certain gate voltage ( V GS ), while the depletion region will gradually get closer to the semiconductor/dielectric interface .…”

Rhodamine 6G and phloxine B as photosensitizers for inkjet-printed indium oxide phototransistors

“…Earlier reports on oxide-based phototransistors have typically studied the effects of applying discrete layers of photosensitizing agent, for instance as a capping layer over the oxide semiconductor material. [16][17][18][19][20][21][24][25][26][38][39][40][41] In this work we also investigate this discrete layer approach by inkjet-patterning of dye over the TFT channel region (Fig. 1c).…”

“…8 Therefore, methods are required to enable photosensitization for detection of longer wavelengths. Photoelectric performance of oxide phototransistors can be enhanced by charge carrier engineering, 9,10 for instance, by exploiting metal oxides, 8,[11][12][13][14][15] perovskites, [16][17][18] or quantum dots [19][20][21] for photosensitization. Since first demonstrated in TiO 2 -based photovoltaics, 22 photosensitizing of oxides with small molecule dyes has been broadly studied in dye-sensitized solar cells.…”

Lead‐Free Cs3Sb2Br9 Single Crystals for High Performance Narrowband Photodetector

“…[15][16][17][18] Compared to polycrystalline films, the high-quality lead free single crystalline perovskites have advantages of long charge carrier diffusion length, low trap density, and long-range ordered patterns, [19][20][21] leading to worldwide interest in nonlead single-crystal based PDs for faster photoresponse and more effective charge extraction. [22][23][24][25][26] In this regard, millimetersized Cs 2 SnCl 6−x Br x single crystal PD with a detectivity of 2.71 × 10 10 Jones and narrow band photodetection (≈45 nm) has been demonstrated with its response spectra continuously modulated from near violet to orange by changing the halide compositions of the single crystals. [17] The Cs 3 Bi 2 I 9 single crystal thin film PD with a detectivity of 9.3 × 10 9 Jones has obtained on-off ratio as high as 11 000, which has directly contributed to the significant reduced trap density and higher carrier mobility.…”