Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications

Garrod, T.; Kirch, Jeremy; Dudley, Peter N.; Kim, S.; Mawst, Luke J.; Kuech, T. F.

doi:10.1016/j.jcrysgro.2010.08.010

Cited by 23 publications

(11 citation statements)

References 27 publications

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“…Compared to prior reports for films grown at lower temperatures (15-113 cm À 2 /V s), these mobility values (i.e. larger than 100 cm À 2 /V s) are improved [23]. The lower carrier concentration and reduced impurity scattering may be responsible for the higher mobilities observed here.…”

Section: N Incorporation In Gaasn Ingaasn and Gaassbn Filmscontrasting

confidence: 73%

“…Bulk GaAsSbN films grown at higher growth temperature were observed to exhibit reduced background carbon contamination [9]. For InGaAsN grown at 600 1C, the background hole carrier concentration is 1 À 2 Â 10 17 cm À 3 , which is two orders of magnitude lower than previously reported for films grown at 525 1C [23]. After post-growth annealing, all of the dilute-nitride materials reported here exhibit hole carrier concentrations in the range of 0.96 À 5.20 Â 10 17 cm À 3 and the mobilities are in the range of 100-250 cm À 2 /V s (Fig.…”

Section: N Incorporation In Gaasn Ingaasn and Gaassbn Filmsmentioning

confidence: 62%

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Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

Kim

Kuech

Mawst

2014

Journal of Crystal Growth

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Section: N Incorporation In Gaasn Ingaasn and Gaassbn Filmscontrasting

confidence: 73%

Section: N Incorporation In Gaasn Ingaasn and Gaassbn Filmsmentioning

confidence: 62%

Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

Kim

Kuech

Mawst

2014

Journal of Crystal Growth

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“…Dilute-nitride materials, such as InGaAsN, InGaAsSbN, and GaAsSbN, grown by MOVPE suffer from an unintentionally high background carbon concentration [7], [11], [12], making it difficult to control n-type compensation doping for realizing a homojunction solar cell structure. We previously reported that the unintentional carbon background doping of GaAsSbN could be minimized by higher growth temperatures and through the use of alternative gallium and antimony MO sources [7].…”

Section: Resultsmentioning

confidence: 99%

1.25-eV GaAsSbN/Ge Double-Junction Solar Cell Grown by Metalorganic Vapor Phase Epitaxy for High Efficiency Multijunction Solar Cell Application

Kim

et al. 2014

IEEE J. Photovoltaics

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Dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) with bandgap energies of 1.25 eV have been integrated into solar cell structures employing a Ge bottom cell on Ge substrate. Single homo-and heterojunction solar cells employing narrow bandgap GaAsSbN (E g ∼ 1.25 eV) are grown normally lattice-matched on a GaAs substrate, using MOVPE. Homojunction solar cell structures were realized by employing GaAsSbN material with low carbon background concentration and Si doping to form a p/n junction. External quantum efficiency measurements in the range (870 nm-1000 nm) reveal that the efficiency of the homojunction solar cell is significantly improved over that of the heterojunction structure. The GaAsSbN homojunction cell was integrated with a Ge single-junction bottom cell on Ge substrate. Under AM1.5 direct illumination, the fabricated GaAsSbN (1.24 eV)/Ge double-junction solar cell with a 600-nm-thick GaAsSbN base layer exhibits J sc , V o c , FF, and efficiency values of 11.59 mA/cm 2 , 0.83 V, 72.58%, and 7% with anti-reflection coating (ARC), respectively.

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“…Dilute nitride samples were grown by the University of Wisconsin at Madison (UW-M) using a vertical chamber MOVPE reactor with a close-coupled showerhead gas delivery system as previously described [7]. Trimethylindium (TMIn) and trimethylgallium (TMGa) were used as group III precursors, tertiary butyl arsine (TBAs) and dimethylhydrazine (DMHy) were used as As and N sources, and trimethylantimony (TMSb) was used as an Sb precursor.…”

Section: Movpementioning

confidence: 99%

Variable temperature carrier dynamics in bulk (In)GaAsNSb materials grown by MOVPE for multi-junction solar cells

et al. 2014

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III-V multi-junction solar cells are typically based on a triple-junction design that consists of an InGaP top junction, a GaAs middle junction, and a bottom junction that employs a 1 -1.25 eV material grown on GaAs substrates. The most promising 1 -1.25 eV material that is currently under extensive investigation is bulk dilute nitride such as (In)GaAsNSb lattice matched to GaAs substrates. The approach utilizing dilute nitrides has a great potential to achieve high performance triple-junction solar cells as recently demonstrated by Wiemer, et al., who achieved a record efficiency of 43.5% from multi-junction solar cells including MBE-grown dilute nitride materials [1]. Although MOVPE is a preferred technique over MBE for III-V multi-junction solar cell manufacturing, MOVPEgrown dilute nitride research is at its infancy compared to MBE-grown dilute nitride. In particular, carrier dynamics studies are indispensible in the optimization of MOVPE materials growth parameters to obtain improved solar cell performance. For the present study, we employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in MOVPE-grown bulk dilute nitride InGaAsN materials (E g = 1 -1.25 eV at RT) lattice matched to GaAs substrates. In contrast to our earlier samples that showed high background C doping densities, our current samples grown using different metalorganic precursors at higher growth temperatures showed a significantly reduced background doping density of ~ 10 17 /cm 3 . We studied carrier dynamics in (In)GaAsNSb double heterostructures (DH) with different N compositions at room temperature. Post-growth annealing yielded significant improvements in carrier lifetimes of (In)GaAsNSb double heterostructure (DH) samples. Carrier dynamics at various temperatures between 10 K and RT were also studied from (In)GaAsNSb DH samples including those samples grown on different orientation substrates.

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Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications

Cited by 23 publications

References 27 publications

Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

1.25-eV GaAsSbN/Ge Double-Junction Solar Cell Grown by Metalorganic Vapor Phase Epitaxy for High Efficiency Multijunction Solar Cell Application

Variable temperature carrier dynamics in bulk (In)GaAsNSb materials grown by MOVPE for multi-junction solar cells

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