Nanowires of Fe/MgO/Fe Encapsulated in Carbon Nanotubes

Seifu, Dereje

doi:10.5772/intechopen.79819

Cited by 2 publications

(2 citation statements)

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“…Three of the samples named #1, #2 and #3 were exposed with TIDs of 5 Mrad (Si), 10 Mrad (Si) and 20 Mrad (Si), respectively. The maximum TID was twice that of [8], [9]. The other two samples, named #4 and #5, were exposed at the same dose rate in one dose step to approximately 247 and 475 Mrad(Si), respectively.…”

Section: B Experimental Proceduresmentioning

confidence: 99%

“…The phenomenon of tunnel magnetoresistance (TMR) has gained enormous attention in recent decades because of its essential applications in nonvolatile magnetoresistive random-access memory (RAM) and next-generation magnetic field sensors [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 ]. This interest follows the emergence and success of related magnetoresistance, such as anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR).…”

Section: Introductionmentioning

confidence: 99%

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Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review

et al. 2023

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Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ devices have promising potential for renewable energy generation and storage. Compared with Si-based devices, MTJs are more tolerant to electromagnetic radiation. In this review, we summarize the functionalities of MgO-based MTJ devices under different electromagnetic irradiation environments, with a focus on gamma-ray radiation. We explore the effects of these radiation exposures on the MgO tunnel barriers, magnetic layers, and interfaces to understand the origin of their tolerance. This review enhances our knowledge of the radiation tolerance of MgO-based MTJs, improves the design of these MgO-based MTJ devices with better tolerances, and provides information to minimize the risks of irradiation under various irradiation environments. This review starts with an introduction to MTJs and irradiation backgrounds, followed by the fundamental properties of MTJ materials, such as the MgO barrier and magnetic layers. Then, we review and discuss the MTJ materials and devices’ radiation tolerances under different irradiation environments, including high-energy cosmic radiation, gamma-ray radiation, and lower-energy electromagnetic radiation (X-ray, UV–vis, infrared, microwave, and radiofrequency electromagnetic radiation). In conclusion, we summarize the radiation effects based on the published literature, which might benefit material design and protection.

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Section: B Experimental Proceduresmentioning

confidence: 99%