Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review

Abstract

Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ devices have promising potential for renewable energy generation and storage. Compared with Si-based devices, MTJs are more tolerant to electromagnetic radiation. In this review, we summarize the functionalities of MgO-based MTJ devices under different electromagnetic irradiation environments, with a focus on gamma-ray radiation. We explore the effects of these radiation exposures on the MgO tunnel barriers, magnetic layers, and interfaces to understand the origin of their tolerance. This review enhances our knowledge of the radiation tolerance of MgO-based MTJs, improves the design of these MgO-based MTJ devices with better tolerances, and provides information to minimize the risks of irradiation under various irradiation environments. This review starts with an introduction to MTJs and irradiation backgrounds, followed by the fundamental properties of MTJ materials, such as the MgO barrier and magnetic layers. Then, we review and discuss the MTJ materials and devices’ radiation tolerances under different irradiation environments, including high-energy cosmic radiation, gamma-ray radiation, and lower-energy electromagnetic radiation (X-ray, UV–vis, infrared, microwave, and radiofrequency electromagnetic radiation). In conclusion, we summarize the radiation effects based on the published literature, which might benefit material design and protection.

A Radiation-Hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices

“…Currently, perpendicular-anisotropy magnetic tunnel junctions (MTJs) are preferred for STT-MRAM due to their adequate storage retention and good scalability. In addition, the storage element of STT-MRAM has been experimentally proved to be highly tolerant to radiation effects [4,[7][8][9]. Since it utilizes the electron spin degree of freedom to store digital data instead of electron charges, the nanoscale MTJ is considered to be radiation-hardened, which makes it attractive for applications in space technology.…”

Synthesis, Characterization, and Applications of Nanomaterials for Energy Conversion and Storage

“…In this context, this editorial provides a comprehensive analysis and exploration of MTJs under irradiation conditions. Seifu et al [59] conducted an in-depth review of MTJs based on MgO and their performance under different electromagnetic radiation environments, evaluating their radiation tolerance. The study examined the mechanisms of MgO tunneling layers, magnetic layers, and interfaces under radiation exposure extensively, offering critical theoretical insights into the origin of their radiation tolerance.…”