Nanowire resonant tunneling diodes

Björk, Mikael; Ohlsson, Björn; Thelander, Claes; Persson, Ann; Deppert, Knut; Wallenberg, L. Reine; Samuelson, Lars

doi:10.1063/1.1527995

Cited by 447 publications

(335 citation statements)

References 20 publications

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“…Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties. Indium phosphide (InP) nanowires (NWs) have attracted an increasing amount of attention because of their extensive use in electronics, 1 optoelectronics, 2,3 and photovoltaics, [4][5][6] and both axial 7,8 and core-shell 9 heterostructures have been developed for new advanced nanoscale devices. However, most NWs reported are grown in the direction perpendicular to that of the close-packed planes in the crystal structure, i.e., in the h111i direction for zincblende (ZB) or the h0001i direction for wurtzite (WZ), in which the NWs commonly have planar stacking faults (SFs), leading to a faulted crystal or even a mixture of ZB/WZ crystal structures.…”

mentioning

confidence: 99%

Position-controlled [100] InP nanowire arrays

Wang

Plissard

Hocevar

et al. 2012

Applied Physics Letters

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confidence: 99%

Position-controlled [100] InP nanowire arrays

Wang

Plissard

Hocevar

et al. 2012

Applied Physics Letters

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“…5 Furthermore, the recent demonstration of semiconductor nanorod quantumwell structures enables us to fabricate nanometer-scale electronic and photonic devices on single nanorods. [6][7][8][9] Recently, ZnO / ZnMgO nanorod heterostructures were fabricated and the quantum confinement effect even from the singlequantum-well structures ͑SQWs͒ was observed. 10 Near-field spectroscopy has made a remarkable contribution to investigations of the optical properties in nanocrystallite, 11 and has resulted in the observation of nanometer-scale optical images, such as the local density of exciton states.…”

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confidence: 99%

Near-field measurement of spectral anisotropy and optical absorption of isolated ZnO nanorod single-quantum-well structures

Yatsui

Ohtsu

Yoo

et al. 2005

Applied Physics Letters

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We report low-temperature near-field spectroscopy of isolated ZnO / ZnMgO single-quantum-well structures ͑SQWs͒ on the end of ZnO nanorod to define their potential for nanophotonics. First, absorption spectra of isolated ZnO / ZnMgO nanorod SQWs with the Stokes shift as small as 3 meV and very sharp photoluminescent peaks indicate that the nanorod SQWs are of very high optical quality. Furthermore, we performed polarization spectroscopy of isolated ZnO SQWs, and observed valence-band anisotropy of ZnO SQWs in photoluminescence spectra directly. Since the exciton in a quantum structure is an ideal two-level system with long coherence times, our results provide criteria for designing nanophotonic devices. © 2005 American Institute of Physics. ͓DOI: 10.1063/1.1990247͔ ZnO nanocrystallites are a promising material for realizing nanometer-scale photonic devices, 1 i.e., nanophotonic devices, at room temperature, owing to their large exciton binding energy 2-4 and large oscillator strength. 5 Furthermore, the recent demonstration of semiconductor nanorod quantumwell structures enables us to fabricate nanometer-scale electronic and photonic devices on single nanorods. [6][7][8][9] Recently, ZnO / ZnMgO nanorod heterostructures were fabricated and the quantum confinement effect even from the singlequantum-well structures ͑SQWs͒ was observed. 10 Near-field spectroscopy has made a remarkable contribution to investigations of the optical properties in nanocrystallite, 11 and has resulted in the observation of nanometer-scale optical images, such as the local density of exciton states. 12 However, reports on semiconductor quantum structure are limited to naturally formed quantum dots ͑QDs͒. 12-14 Here we report low-temperature near-field spectroscopy of artificially fabricated ZnO SQWs on the end of a ZnO nanorod.ZnO / ZnMgO SQWs were fabricated on the ends of ZnO stems with a mean diameter of 40 nm and a length of 1 m using catalyst-free metalorganic vapor phase epitxy, in which the ZnO nanorods were grown vertically from a sapphire ͑0001͒ substrate in the c orientation. 10,15 The Mg concentration in the ZnMgO layers averaged 20 at. %. Two samples were prepared for this study: their ZnO well layer thickness L w , were 2.5 and 3.75 nm, while the thicknesses of the ZnMgO bottom and top barrier layers in the SQWs were fixed at 60 and 18 nm, respectively. After growing the ZnO / ZnMgO nanorod SQWs, they were dispersed so that they were laid down on a flat sapphire substrate to isolate them from each other ͓Fig. 1͑a͔͒.The far-field photoluminescence ͑PL͒ spectra were obtained using a He-Cd laser ͑ = 325 nm͒ before dispersion of the ZnO / ZnMgO nanorod SQWs. The emission signal was collected with the acromatic lens ͑f =50 mm͒. To confirm that the optical qualities of individual ZnO / ZnMgO SQWs were sufficiently high, we used a collection-mode near-field optical microscope ͑NOM͒ using a He-Cd laser ͑ = 325 nm͒ for excitation, and a UV fiber probe with an aperture diameter of 30 nm. The excitation source was focused on a nanorod ...

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“…INTRODUCTION * E-mail: wojto@ifpan.edu.pl; Fax: +48- Studies of semiconductor nanowires (NWs) have recently been strongly intensified [1][2][3] due to the hope of using these 1D structures as "building blocks" for nanoscale electronic and photonic devices [4][5][6]. Prototype NW-based devices working as light-emitting diodes [7] and lasers [2,8], photodetectors [9], resonant tunnelling diodes [10], field effect [6] and single-electron transistors [11], and biochemical sensors [12] have already been demonstrated.…”

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MBE Growth and Properties of ZnTe- and CdTe-Based Nanowires

Wójtowicz¹,

Janik²,

Zaleszczyk³

et al. 2008

J. Korean Phy. Soc.

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We review our results on the growth of ZnTe-and CdTe-based nanowires (NWs) and on their basic structural and optical properties. The nanowires were produced by using molecular beam epitaxy (MBE) with the use of a mechanism of catalytically-enhanced growth. The growth of ZnTe, CdTe, ZnMgTe and ZnMnTe nanowires was performed from elemental Zn, Cd, Mn, Mg and Te sources on the surfaces of (001)-, (110)-and (111)B-oriented GaAs substrates with Au nanocatalysts. The morphological and structural properties of the nanowires were assessed by using X-ray diffractometry, field-emission scanning electron microscopy, and high resolution transmission electron microscopy. Additional studies of the compositions of both the nanowires and the Au-rich nanocatalysts were performed with the use of energy dispersive X-ray spectroscopy. The optical properties of the NWs were assessed by using photoluminescence and Raman-scattering studies performed in both macro and micro modes. The studies revealed that binary and quaternary nanowires with average diameters from 30 to 70 nm and lengths from 1 to 2.6 µm were monocrystalline in their upper parts, their growth axis was 111 , and they grow along the [111] direction of the substrate, independent of the substrate orientation used. A Au-rich (with 20 % Ga) spherical nanocatalyst was always visible at the tip of a nanowire, thus indicating that a vapor-liquid-solid mechanism was responsible for the growth of the ZnTe-and the CdTe-based nanowires. The formation of homogeneous mixed crystal ZnMnTe and ZnMgTe nanowires was demonstrated by measurements of the variation of the lattice constant and by Raman experiments that revealed the expected shift and appearance of new phonon lines and a strong enhancement of the LO-phonon structures for an excitation close to the exciton energy of the NW materials. The photoluminescence from the internal Mn 2+ transition between crystal-field-split energy levels ( 4 T1 → 6 A1) was observed in the ZnMnTe nanowires.

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Nanowire resonant tunneling diodes

Cited by 447 publications

References 20 publications

Position-controlled [100] InP nanowire arrays

Position-controlled [100] InP nanowire arrays

Near-field measurement of spectral anisotropy and optical absorption of isolated ZnO nanorod single-quantum-well structures

MBE Growth and Properties of ZnTe- and CdTe-Based Nanowires

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