Nanowire-on-Nanowire: All-Nanowire Electronics by On-Demand Selective Integration of Hierarchical Heterogeneous Nanowires

Lee, Habeom; Manorotkul, Wanit; Lee, Sung Yong; Kwon, Jinhyeong; Suh, Yong-Suk; Paeng, Dongwoo; Grigoropoulos, Costas P.; Han, Seungyong; Hong, Sukjoon; Yeo, Junyeob; Ko, Seung Hwan

doi:10.1021/acsnano.7b06098

Cited by 39 publications

(24 citation statements)

References 45 publications

(66 reference statements)

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“…Hierarchical structures with different length scales and/or multilevel patterns created by microscale patterning can improve the mechanical properties of materials including strength, stability, and flexibility, while nanoscale structuring can lead to augmented functionalities in optics (e.g., reflection, antireflection, diffraction, and scattering), [ 1–3 ] physics (e.g., superwetting and directional adhesion), [ 4–7 ] and even biology (e.g., tissue scaffolds). [ 8–11 ] Therefore application of these structures can be found in photonics, [ 12 ] electronics, [ 13 ] biology, [ 14 ] and catalysis. [ 15 ]…”

Section: Introductionmentioning

confidence: 99%

Multilevel Spherical Photonic Crystals with Controllable Structures and Structure‐Enhanced Functionalities

Wang

Le‐The

Shui

et al. 2020

Advanced Optical Materials

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Spherical photonic crystals (SPCs) with tailorable multiscale structure, versatile surface morphology, and controllable optical properties of both photonic stop band (PSB) and surface plasmon resonance (SPR), have been fabricated using a robust and facile method. The fabricated SPCs consist of well‐spaced gold nanocrystals (AuNCs) (3rd‐tier) anchored on silica nanopatterns (2nd‐tier) confined in microspherical templates (1st‐tier). Droplet microfluidics is used to produce microdroplets containing silica nanoparticles (SiO2NPs) which assemble to form two‐tier SPCs. Subsequently, three‐tier SPCs are obtained by thermal dewetting and evaporation of metal films deposited on the two‐tier SPCs, with the 3rd‐tier morphology being controlled by the deposited film morphology and programmed thermal annealing. Optical PSB and SPR properties of the prepared SPCs can be on‐demand tailored by the 2nd and 3rd‐tier morphology and their corresponding constituent materials. It is found that the scattering from AuNC arrays on the SPCs can be amplified by tailoring the PSB properties. The hierarchical SPCs manufactured by this method take advantages of low‐cost, high controllability, and further processability. The manufacturing of flexible film encapsulated well‐assembled SPCs as anticounterfeiting stamps, which are easy to be identified using the mobile phone with a flash, is demonstrated.

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Section: Introductionmentioning

confidence: 99%

Multilevel Spherical Photonic Crystals with Controllable Structures and Structure‐Enhanced Functionalities

Wang

Le‐The

Shui

et al. 2020

Advanced Optical Materials

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“…The optical properties of Semiconductor Nanowires (NWs) (high refractive index, light confinement, and uniform diameter) offer excellent base Nanoscale optical circuits (Chad Husko. et al, 2018;Xiaojie, 2015;Peidong, 2010;Xing, 2014;Habeom et al, 2017;Muskens et al, 2008;Muskens et al, 2009;Ochoa-Martínez et al, 2018). In (Chad Husko.…”

Section: Introductionmentioning

confidence: 99%

Uniaxial Strain and Optical properties of GaP Nanowires

Mohammad

2020

PTUKRJ

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The optical properties for wurtzite (WZ) Bulk GaP and GaP nanowires (GaP-NWs) in hexagonal(circular), triangular and square cross sectional are investigated by using full potential linear augmented plane waves and local orbitals (FP-LAPW-LO) method based on density functional theory (DFT). The wurtzite nanowires are investigated with diameters limited to ~27 oA. The optical functions as a function of photon energy have been investigated for unstrained bulk WZ-GaP and WZ-GaP-NWs in the first part. Finally, the optical functions are investigated for WZ-GaP-NWs by applying uniaxial strain from -5% to +5%. The effect of cross sectional variation in the area and shape of the NWs on the optical functions is clear when compared with bulk GaP. GaP-NWs kept real dielectric constant positive and refractive index close to vacuum value for a wider range of energy on the contrary of bulk GaP. It is found that the dielectric constants are slightly increased from the unstrained GaP-NWs values with strain increases. A shift in the threshold energy for toward higher energy as the strain changes from tensile to compressive. The refractive index shows a small change when passing from compressive toward tensile strain. It is found that GaP-NWs could play a role in solar cells structure and high speed electronic circuits.

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“…Toward further downsizing and accomplishing high‐performance, 1D semiconductor and metal heterojunction‐based electronic nanodevices are emerging as an appealing supplement to the existing Si‐technology . In this regard, zinc oxide (ZnO) nanowire (NW) is of particular interest.…”

Section: Introductionmentioning

confidence: 99%

Photothermal‐Induced Nanowelding of Metal–Semiconductor Heterojunction in Integrated Nanowire Units

Ghosh

Chen

et al. 2018

Adv Elect Materials

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to develop an adequate method to combine them together and understand its charge transport mechanisms.Recent advancements in the field of welding of NWs research indicate its potential capabilities in fabrication and repairing nanoelectronics, [16][17][18][19] nanophotonics, [20] nanomedicine, [21] and nanoelectromechanical systems. [22] There are reports of successful nanowelding following various techniques, including thermal annealing, [23] optical welding, [24][25][26][27][28] capillarity-driven welding, [29] chemical welding, [30] spot welding, [31] stretchinduced cold-welding, [32][33][34] and welding by Joule heating. [35,36] Although much progress has been achieved in this field, there remains many cumbersome issues, such as necessitating complicated and expensive experimental setup, use of chemicals which can contaminate the system, and lack of robustness corresponding to mechanical strength and electrical connectivity, yet to be addressed. Furthermore, the joining of semiconductor and metal NWs remains a challenging issue for miniaturization and integration of next generation nanodevices as the melting points of these two different types of materials are different.In this article, we present a relatively simple technique to achieve adequate welding of ZnO NW with Ag NW and also both type of NWs with Au electrode toward realizing heterojunction-based electronic nanodevices. The effects of local heat generation in closely spaced semiconductor and metal nanostructures due to strong optical interactions have been utilized for melting and eventually welding these nanostructures. Following this technique, four different electronic devices (two devices consisting of one Schottky and two ohmic junctions, one device with two back-to-back Schottky junctions, and another one with three ohmic contacts) have been fabricated. The devices with one Schottky and two ohmic junctions have been fabricated following two different approaches for two different orientations of the ZnO (top/bottom) and Ag (bottom/top) NWs. Although the temperature difference between the melting points of ZnO and Ag NWs is about 1000 K, it has been demonstrated that the melting points of both NWs are reached simultaneously when ZnO NW in on top of Ag NW, which results in superior quality of welding. Thereafter, toward understanding the transport mechanisms of all these devices, the obtained currentvoltage (I-V) characteristic curves are analyzed in detail. This photothermal nanowelding technique paves the path for realizing heterostructure-based 1D electronic nanodevices.An improvised and comparatively inexpensive method for welding semiconductors and metal nanowires (NWs) utilizing a plasmon-enhanced photothermal effect is presented in this article. Different types of heterojunction-based (single Schottky junction and back-to-back Schottky junctions) electronic nanodevices are fabricated by welding various combinations of silver and ZnO NWs on two gold electrodes using continuous wave laser (λ = 532 nm) shots. It is inferred from the current-vo...

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Nanowire-on-Nanowire: All-Nanowire Electronics by On-Demand Selective Integration of Hierarchical Heterogeneous Nanowires

Cited by 39 publications

References 45 publications

Multilevel Spherical Photonic Crystals with Controllable Structures and Structure‐Enhanced Functionalities

Multilevel Spherical Photonic Crystals with Controllable Structures and Structure‐Enhanced Functionalities

Uniaxial Strain and Optical properties of GaP Nanowires

Photothermal‐Induced Nanowelding of Metal–Semiconductor Heterojunction in Integrated Nanowire Units

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