2009
DOI: 10.1021/ja8095575
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Nanowire-Based All-Oxide Solar Cells

Abstract: We present an all-oxide solar cell fabricated from vertically oriented zinc oxide nanowires and cuprous oxide nanoparticles. Our solar cell consists of vertically oriented n-type zinc oxide nanowires, surrounded by a film constructed from ptype cuprous oxide nanoparticles. Our solution-based synthesis of inexpensive and environmentally benign oxide materials in a solar cell would allow for the facile production of large-scale photovoltaic devices. We found that the solar cell performance is enhanced with the a… Show more

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Cited by 349 publications
(253 citation statements)
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“…High aspect-ratio semiconductor microwire and nanowire array structures have shown promise in liquid junction devices for solar energy-conversion applications (13)(14)(15)(16)(17)(18). A key attribute of these wire array structures is the orthogonalization of the directions of light absorption and photogenerated charge-carrier collection (19).…”
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confidence: 99%
“…High aspect-ratio semiconductor microwire and nanowire array structures have shown promise in liquid junction devices for solar energy-conversion applications (13)(14)(15)(16)(17)(18). A key attribute of these wire array structures is the orthogonalization of the directions of light absorption and photogenerated charge-carrier collection (19).…”
mentioning
confidence: 99%
“…͓doi:10.1063/1.3567527͔ To achieve a high energy conversion efficiency, a solar cell must be thick enough for sufficient light absorption, yet it must be thin enough for efficient carrier collection. [1][2][3] Recently, the applications of nanocoax, 1 nanocone, 4,5 nanodome, 6 nanopillar, 7,8 nanorod, 2,3,9-13 and nanowire [14][15][16][17][18][19][20][21][22][23][24] structures for solar cells have attracted great interest. Compared to the conventional planar thin film counterparts, the nanostructured devices demonstrate the benefits of enhancing charge collection and improving light absorption simultaneously, due to their unique geometry.…”
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confidence: 99%
“…In an ideal device, R s = 0 and R sh = ? (Yuhas and Yang 2009). The parasitic resistance (R s and R sh ) can be calculated using equation of single diode model (Chenni et al 2007)…”
Section: Resultsmentioning
confidence: 99%