Nanotube carbon transistor (CNTFET): I-V and C-V, a qualitative comparison between fettoy simulator and compact model

Aouaj, Abdellah; Bouziane, Amal; Nouacry, A.

doi:10.1109/mmcs.2009.5256697

Cited by 7 publications

(3 citation statements)

References 6 publications

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“…Further, since transistors M 9 and M 10 are biased with equal gate voltages (and since their source voltages are also equal), they would have equal drain currents. The relation between X and Y nodes presented as (2). Additionally, transistors M 7 andM 11 provide the necessary feedback action to make the voltage VX independent of current drawn from the terminal X.…”

Section: Brief Discussion On Dvccmentioning

confidence: 99%

Designing an Improved Resistive Sensor Interface With Cnfet.

Arslan¹

2019

IJAR

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Section: Brief Discussion On Dvccmentioning

confidence: 99%

Designing an Improved Resistive Sensor Interface With Cnfet.

Arslan¹

2019

IJAR

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“…This simulator analyzes the ballistic current voltage characteristics for a carbon nano tube MOSFETs to high accuracy. Only the lowest subband is considered, but it is readily modifiable to include multi sub-bands [10,11]. Although this tool is only valid for a single transistor it is still the base for other CNTFET models.…”

Section: Model Analysismentioning

confidence: 99%

“…In recent years, ongoing research endeavors have revealed a number of CNTFET computer models that are compatible with SPICE that helps a great deal in evaluating delays, estimating power requirements and simulating any performance degradation. Further, it makes multiple transistor circuit simulations more viable [10][11][12][13][14][15].…”

mentioning

confidence: 99%

Impacts of Parameter Scaling for Low-Power Applications Using CNTFET (Carbon Nanotube Field Effect Transistor) Models: A Comparative Assessment

Al-Shaggah¹,

Rjoub²,

Khasawneh³

2014

JEPE

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Abstract:This paper provides an extension to the earlier work wherein a comparison between different models that had studied the effects of several parameters scaling on the performance of carbon nano tube field-effect transistors was presented. The evaluation for the studied models, with regard to the scaling effects, was to determine those which best reflect the very essence of carbon nano-tube technologies. Whereas the models subject this comparison (Fettoy, Roy, Stanford, and Southampton) were affected to varying degrees due to such parametric variations, the Stanford model was shown as still being valid for a wide range of chiralities and diameter sizes; a model that is also applicable for circuit simulations. In this paper, we present a comparative assessment of the various models subject to the study with regard to the effect of incorporating multiple carbon nanotubes in the channel region. We also assess the effect of oxide thickness on transistor performance in terms of the supply voltage threshold effects. Results leveraging our findings in this ongoing research endeavor reveal that many research efforts were not efficient to high degree due to high delay and not valid for circuit simulations.

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On the design of improved resistive sensor interface using 32 nm CNFET

Tripathi

Joshi²

2021

Materials Today: Proceedings

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Nanotube carbon transistor (CNTFET): I-V and C-V, a qualitative comparison between fettoy simulator and compact model

Cited by 7 publications

References 6 publications

Designing an Improved Resistive Sensor Interface With Cnfet.

Designing an Improved Resistive Sensor Interface With Cnfet.

Impacts of Parameter Scaling for Low-Power Applications Using CNTFET (Carbon Nanotube Field Effect Transistor) Models: A Comparative Assessment

On the design of improved resistive sensor interface using 32 nm CNFET

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