2008
DOI: 10.1021/la8016722
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Nanotransfer of the Polythiophene Molecular Alignment onto the Step-Bunched Vicinal Si(111) Substrate

Abstract: A poly(3-dodecylthiophene-2,5-diyl) film having in-plane anisotropic molecular arrangement was successfully fabricated by transferring its Langmuir-Blodgett film onto a step-bunched Si(111) substrate. Polarized near-edge X-ray absorption fine structure measurements revealed that the polythiophene main chains are preferentially orientated along periodic facet/terrace nanostructures on the step-bunched substrate, whereas less anisotropy was found on a flat substrate. The step-bunched Si substrate has been proved… Show more

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Cited by 11 publications
(10 citation statements)
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References 27 publications
(39 reference statements)
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“…The analysis of the SP1 spectator shift parameters of the RAS spectra measured at these three photon energies shows that the electron delocalization degree of electron excited of π* symmetry (2471.9 eV) and σ* (2474.4 eV) states is higher for P3HT/ITO than P3HT/Fe-MWCNT-5%. This σ* transition presents a transition moment perpendicular to the polymer backbone, as previously discussed by H. Ikeura-Sekiguchi et al 55 and R. Onoki et al 57 However, at photon energy corresponding to the resonance maximum (2473.2 eV) the electron delocalization degree is higher for the P3HT/Fe-MWCNT-5% nanocomposite compared to P3HT/ITO. These results show that the electronic coupling between P3HT and Fe-MWCNT depends on the character of the electronic excited states.…”
Section: Resultssupporting
confidence: 68%
“…The analysis of the SP1 spectator shift parameters of the RAS spectra measured at these three photon energies shows that the electron delocalization degree of electron excited of π* symmetry (2471.9 eV) and σ* (2474.4 eV) states is higher for P3HT/ITO than P3HT/Fe-MWCNT-5%. This σ* transition presents a transition moment perpendicular to the polymer backbone, as previously discussed by H. Ikeura-Sekiguchi et al 55 and R. Onoki et al 57 However, at photon energy corresponding to the resonance maximum (2473.2 eV) the electron delocalization degree is higher for the P3HT/Fe-MWCNT-5% nanocomposite compared to P3HT/ITO. These results show that the electronic coupling between P3HT and Fe-MWCNT depends on the character of the electronic excited states.…”
Section: Resultssupporting
confidence: 68%
“…The results are shown in Figure , with f u ′ and f u ″ being applicable when the X-ray polarization is parallel to the lamellar stacking direction, f v ′ and f v ″ being applicable when the X-ray polarization is parallel to the π–π stacking direction, and f w ′ and f w ″ being applicable when the X-ray polarization is parallel to the backbone stacking direction. Based on previous observations and calculations of the X-ray absorption spectra of thiophene and thiophene-containing molecules and polymers, the large peak in the f w ″ spectrum corresponds to the 1s → (S–C)­σ* peak whose transition dipole moment is predominantly directed along the backbone . The dominant peak in the f v ″ spectrum that is ∼1 eV lower in energy corresponds to the 1s → (S–C)­π* peak whose transition dipole moment is oriented perpendicular to the thiophene ring and hence perpendicular to the polymer backbone.…”
mentioning
confidence: 83%
“…Even though these K edges start to go beyond the energy range of many soft X-ray beamlines, there is much interest to increase capabilities in this "tender" X-ray (2 keV-7 keV) regime. Although typically less common due to the limited number of endstations that can perform XAS or RSoXS near the sulfur and phosphorus K edges, notable work has been done on sulfur edge XAS to probe molecular orientation of semiconducting oligothiophenes such as α-sexithiophene [80][81][82], polythiophenes [83][84][85]20], and low-bandgap donoracceptor polymers [84,20,86]. Assigning the transitions near the sulfur K edge is difficult not only because of the limited body of work published, but also due to challenges such as π * and σ * peaks being very close in energy.…”
Section: Going Beyond the Carbon K Edgementioning
confidence: 99%