2009
DOI: 10.1116/1.3250208
|View full text |Cite
|
Sign up to set email alerts
|

Nanostructuring of epitaxial graphene layers on SiC by means of field-induced atomic force microscopy modification

Abstract: Micrometer-size graphene ribbons are generated by epitaxial growth on SiC substrates and contacted by electron beam lithography. The isolated graphene islands are patterned at nanometer scale by atomic force microscopy (AFM) under the application of an external polarization to the graphene layers. Contrary to previous reports, the patterning can be made at positive and negative polarizations and using significantly lower absolute voltages. The technique is used to tune the electrical resistance of the graphene… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

0
10
0

Year Published

2011
2011
2019
2019

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 15 publications
(10 citation statements)
references
References 28 publications
0
10
0
Order By: Relevance
“…[11][12][13][14][15][16][17][18][19][20][21][22][23][24] The local chemical contrast between the oxide nanopatterns and the remainder of the sample surface has been exploited to template subsequent selective attachment of organic and biological molecules. [ 9 ] Recently, cAFM has been employed for nanopatterning of carbon-based materials including carbon nanotubes, [ 25 ] mechanically exfoliated graphene fl akes, [26][27][28] epitaxial graphene on silicon carbide, [ 29 ] highly oriented pyrolytic graphite (HOPG), [ 30 , 31 ] and graphene oxide. [ 32 ] In particular, the initial studies on graphene [26][27][28][29] have focused on the utility of cAFM nanopatterning for fabricating prototype electronic devices from graphene nanoribbons.…”
Section: Doi: 101002/adma201100367mentioning
confidence: 99%
See 1 more Smart Citation
“…[11][12][13][14][15][16][17][18][19][20][21][22][23][24] The local chemical contrast between the oxide nanopatterns and the remainder of the sample surface has been exploited to template subsequent selective attachment of organic and biological molecules. [ 9 ] Recently, cAFM has been employed for nanopatterning of carbon-based materials including carbon nanotubes, [ 25 ] mechanically exfoliated graphene fl akes, [26][27][28] epitaxial graphene on silicon carbide, [ 29 ] highly oriented pyrolytic graphite (HOPG), [ 30 , 31 ] and graphene oxide. [ 32 ] In particular, the initial studies on graphene [26][27][28][29] have focused on the utility of cAFM nanopatterning for fabricating prototype electronic devices from graphene nanoribbons.…”
Section: Doi: 101002/adma201100367mentioning
confidence: 99%
“…[ 9 ] Recently, cAFM has been employed for nanopatterning of carbon-based materials including carbon nanotubes, [ 25 ] mechanically exfoliated graphene fl akes, [26][27][28] epitaxial graphene on silicon carbide, [ 29 ] highly oriented pyrolytic graphite (HOPG), [ 30 , 31 ] and graphene oxide. [ 32 ] In particular, the initial studies on graphene [26][27][28][29] have focused on the utility of cAFM nanopatterning for fabricating prototype electronic devices from graphene nanoribbons. However, the cAFM nanopatterning kinetics, growth mechanism, and chemistry on graphene remain open questions.…”
Section: Doi: 101002/adma201100367mentioning
confidence: 99%
“…The possibility of direct writing on graphene to construct electronic circuits by scanning probe lithography (SPL) is particularly exciting and has been extensively examined by different approaches891011 with the focus of creating well-defined insulated separators on highly conductive graphene. In this context, a chemically more realistic approach is to create conducting nanoribbons on insulated graphene oxides (GO) through the reduction reaction.…”
mentioning
confidence: 99%
“…This observation supports the use of a resist-free direct lithography technique such as o-SPL to pattern epitaxial graphene. Previous results of o-SPL on epitaxial graphene have shown the potential of this technique for the patterning of graphene on SiC [29][30][31], although high-resolution nanopatterns have not been produced so far for this type of graphene. Moreover, a deep characterization of the processes involved in o-SPL of graphene with nanometer resolution is missing.…”
Section: Introductionmentioning
confidence: 99%