“…The electronic processes for HE can be described by semiconductor–cocatalyst–solution (SCS) interfacial electron transfer. Although the electrocatalytic step is efficient, semiconductor–cocatalyst (SC) interfacial electron transfer that occurs on the decisecond–second time scale is the rate-determining step in the whole photocatalytic reaction. ,, Many approaches thus far, such as nanostructuring induced confinement for electron tunneling , and the creation of surface sites for trap-assisted charge recombination, have been proposed to reduce the activation energy. , The creation of surface sites can also modify the reactivity of the semiconductor and, − ideally, replace the role of the cocatalyst by appropriate design. − Although it seems that this strategy can avoid excess energy dissipation for SC interfacial electron transfer, , optimally the cocatalyst-free photocatalysts usually deliver reaction rates comparable to that of conventional construction . These phenomena indicate that the activation energy for the semiconductor–catalytic site–solution (SCsS) interfacial electron transfer of the HE half-reaction is still high.…”