Nanostructures based on UWBG materials

Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene

“…Integrated microwave photonics, van der Waals epitaxy-based lift-off and integration as well as power electronics are the new directions which will highly benefit from the direct growth of h-BN crystals on dielectric/insulating substrates. A key point to note is that while h-BN has been mainly used as an insulating 2D layer for most current electronic applications, the ability to grow high-quality and large area films with controlled doping and contact engineering can potentially open up its applications as a channel material in ultra-wide band-gap (UWBG) power electronics ( Liao et al., 2019 ; Tsao et al., 2018 ). This is a particularly noteworthy application since h-BN possesses a large band-gap, a low effective mass and high thermal conductivity making it an ideal material for UWBG power electronics ( Jo et al., 2013 ; Xu and Ching, 1991 ).…”