Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

Barbosa, M. B.; Gonçalves, J. N.; Redondo-Cubero, A.; Miranda, S. M. C.; Simon, Ronnie; Kessler, P.; Brandt, M.; Henneberger, F.; Nogales, E.; Méndez, B.; Johnston, K.; Alves, E.; Vianden, R.; Araújo, João P.; Lorenz, K.; Correia, J. G.

doi:10.1002/pssb.201200923

Cited by 5 publications

(17 citation statements)

References 23 publications

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“…Fig. 8b reproduces previous PAC data taken on Ga 2 O 3 NWs carried out under the same conditions as those used for the bulk crystal 19 . Directly after the implantation, the graph shows a strong attenuation of the PAC R(T) experimental function, typical for as-implanted samples due to the distribution of implantation defects around the probe.…”

Section: Lattice Site Location Of Implanted 111supporting

confidence: 79%

“…Synchrotron X-ray absorption near edge structure and extended X-ray absorption fine structure data have been used for lattice site location measurements in NWs 30 . In Ga 2 O 3 NWs we applied the Perturbed Angular Correlation (PAC) technique to infer, particularly, on the lattice site of implanted radioactive 111m Cd probes 19 , being Cd in this case a conceptually interesting p-type dopant.…”

Section: Lattice Site Location Of Implanted 111mentioning

confidence: 99%

“…Spectra were taken in two different geometries: with the <201> axis perpendicular to the detector plane (top); and with the <201> axis lying in the detector plane, aligned with the angle bisector of two detectors at a relative angle of 45° between axis and detectors (bottom). (b) RT PAC spectra of the as-implanted NW sample and after annealing at 800 ºC (adapted from [19] with permission from WILEY).…”

Section: Lattice Site Location Of Implanted 111mentioning

confidence: 99%

“…In this way PAC is well suited to explore the lattice sites and next neighbor defects of certain radioactive probe elements at the atomic scale, in a wide variety of samples including bulk single crystals, powders, thin films and nanocrystals 19 . A least square fit to the spectra (also shown in Fig.…”

Section: Lattice Site Location Of Implanted 111mentioning

confidence: 99%

“…Cd which was implanted with a 30 keV energy beam to low fluences of ~5×10 11 at/cm 2 at RT 19 . In the case of the bulk crystals, only four of the six detectors were used arranged in one plane at 90º to each other.…”

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Doping of Ga₂O₃bulk crystals and NWs by ion implantation

Lorenz¹,

Peres²,

Felizardo³

et al. 2014

SPIE Proceedings

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Ga 2 O 3 bulk single crystals have been implanted with 300 keV Europium ions to fluences ranging from 1×10 13 to 4×10 15 at/cm 2 . The damage build-up and Eu-incorporation was assessed by Rutherford Backscattering Spectrometry in the channeling mode (RBS/C). RBS/C results suggest that implantation causes a mixture of defect clusters and extended defects such as dislocations. Amorphisation starts at the surface for fluences around 1×10 15 at/cm 2 and then proceeds to deeper regions of the sample with increasing fluence. Amorphous regions and defect clusters are efficiently removed during rapid thermal annealing at ~1100 ºC; however, Eu diffuses towards the surface. Nevertheless, Eu ions are optically activated and show cathodoluminescence at room temperature. Results in bulk samples are compared to those in Eu-implanted Ga 2 O 3 nanowires and despite strong similarities in the structural properties differences were found in the optical activation. Furthermore, damage and dopant incorporation studies were performed using the Perturbed Angular Correlation technique, which allows probing the immediate lattice surroundings of an implanted radioactive probe at the atomic level.

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Section: Lattice Site Location Of Implanted 111supporting

confidence: 79%

Section: Lattice Site Location Of Implanted 111mentioning

confidence: 99%

Section: Lattice Site Location Of Implanted 111mentioning

confidence: 99%

Section: Lattice Site Location Of Implanted 111mentioning

confidence: 99%

mentioning

confidence: 99%

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Doping of Ga₂O₃bulk crystals and NWs by ion implantation

Lorenz¹,

Peres²,

Felizardo³

et al. 2014

SPIE Proceedings

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Investigation on structural aspects of ZnO nano-crystal using radio-active ion beam and PAC

Ganguly

Dutta

Roy

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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a b s t r a c tNano-crystalline ZnO has been studied with perturbed angular correlation using 111m Cd, implanted at ISOLDE/CERN and X-ray diffraction using Rietveld analysis. The data show a gradual increase in the crystal size and stress for a sample annealed at 600°C, and reaching nearly properties of standard ZnO with tempering at 1000°C. The perturbed angular correlation data show a broad frequency distribution at low annealing temperatures and small particle sizes, whereas at high annealing temperature and larger crystal sizes, results similar to bulk ZnO have been obtained. The ZnO nano-crystalline samples were initially prepared through a wet chemical route, have been examined by Fourier Transform Infrared Spectroscopy (FT-IR) and chemical purity has been confirmed with Energy Dispersive X-ray (EDAX) analysis as well as Transmission Electron Microscopy (TEM).

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Contactless doping characterization of $${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ using acceptor Cd probes

Barbosa

Correia

Lorenz

et al. 2022

Sci Rep

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Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $$\beta$$ β -$${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ Ga 2 O 3 could strongly influence and contribute to the development of the next generation of power electronics. In this work, we combine easily accessible ion implantation, diffusion and nuclear transmutation methods to properly incorporate the Cd dopant into the $$\beta$$ β -$${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ Ga 2 O 3 lattice, being subsequently characterized at the atomic scale with the Perturbed Angular Correlation (PAC) technique and Density Functional Theory (DFT) simulations. The acceptor character of Cd in $$\beta$$ β -$${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ Ga 2 O 3 is demonstrated, with Cd sitting in the octahedral Ga site having a negative charge state, showing no evidence of polaron deformations nor extra point defects nearby. The possibility to determine the charge state of Cd will allow assessing the doping type, in particular proving p-type character, without the need for ohmic contacts. Furthermore, a possible approach for contactless charge mobility studies is demonstrated, revealing thermally activated free electrons for temperatures above $$\sim$$ ∼ 648 K with an activation energy of 0.54(1) and local electron transport dominated by a tunneling process between defect levels and the Cd probes at lower temperatures.

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Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

Cited by 5 publications

References 23 publications

Doping of Ga₂O₃bulk crystals and NWs by ion implantation

Doping of Ga₂O₃bulk crystals and NWs by ion implantation

Investigation on structural aspects of ZnO nano-crystal using radio-active ion beam and PAC

Contactless doping characterization of $${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ using acceptor Cd probes

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Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

Cited by 5 publications

References 23 publications

Doping of Ga2O3bulk crystals and NWs by ion implantation

Doping of Ga2O3bulk crystals and NWs by ion implantation

Investigation on structural aspects of ZnO nano-crystal using radio-active ion beam and PAC

Contactless doping characterization of $${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ using acceptor Cd probes

Contact Info

Product

Resources

About

Doping of Ga₂O₃bulk crystals and NWs by ion implantation

Doping of Ga₂O₃bulk crystals and NWs by ion implantation