Nanostructured silicon geometries for directly bonded hybrid III–V-silicon active devices

Pang, Chengxin; Bénisty, Henri

doi:10.1016/j.photonics.2012.12.003

Cited by 10 publications

(16 citation statements)

References 14 publications

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“…8 Three different oxide preparation techniques are investigated for the oxidation of the Si surface: PECVD, radio frequency (RF) sputtering, and thermal oxidation. Oxide being an amorphous material with a poor thermal conductivity (110 times lower than silicon), the thermal behavior of bonded hybrid devices will take advantage of an oxide layer as thin as possible.…”

Section: Introductionmentioning

confidence: 99%

Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation

Ahmad

Pantzas

Sagnes

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Section: Introductionmentioning

confidence: 99%

Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation

Ahmad

Pantzas

Sagnes

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…20 A 2D array of holes ensures the lateral confinement; it operates as an effective medium when designed at a period below its photonic gap. E-beam patterning and ICP dry-etching are used to produce nanopatterned waveguides in the Si guiding layer of a SOI substrate.…”

Section: -mentioning

confidence: 99%

Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon

Talneau¹,

Roblin²,

Ahmad³

et al. 2013

Applied Physics Letters

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“…Echoing the numerous novel uses of subwavelength structures in silicon photonics [9], oxide-free bonding of nanostructured silicon to III-V EHS was also demonstrated successfully [10], with positive photonics tests [11]. Besides a possible ohmic use, nanopatterns offer the capability of lateral guidance combined with additionally lateral thermal sinking in the upper silicon slab [12].…”

Section: Introductionmentioning

confidence: 97%

Low-index nanopatterned barrier for hybrid oxide-free III-V silicon conductive bonding

Bougot-Robin¹,

Talneau²,

Bénisty³

2014

Opt. Express

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Oxide-free bonding of a III-V active stack emitting at 1300-1600 nm to a silicon-on-insulator wafer offers the capability to electrically inject lasers from the silicon side. However, a typical 500-nm-thick silicon layer notably attracts the fundamental guided mode of the silicon + III-V stack, a detrimental feature compared to established III-V Separate-Confinement Heterostructure (SCH) stacks. We experimentally probe with photoluminescence as an internal light source the guiding behavior for oxide-free bonding to a nanopatterned silicon wafer that acts as a low-index barrier. We use a sub-wavelength square array of small holes as an effective "low-index silicon" medium. It is weakly modulated along one dimension (superperiodic array) to outcouple the resulting guided modes to free space, where we use an angle-resolved spectroscopy study. Analysis of experimental branches confirms the capability to operate with a fundamental mode well localized in the III-V heterostructures.

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Nanostructured silicon geometries for directly bonded hybrid III–V-silicon active devices

Cited by 10 publications

References 14 publications

Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation

Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation

Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon

Low-index nanopatterned barrier for hybrid oxide-free III-V silicon conductive bonding

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