Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon

Talneau, A.; Roblin, Christophe; Ahmad, Ishtiaq; Mauguin, O.; Largeau, L.; Beaudouin, G.; Sagnes, I.; Patriarche, G.; Pang, Chengxin; Bénisty, Henri

doi:10.1063/1.4807890

Cited by 32 publications

(28 citation statements)

References 19 publications

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“…13 Wet oxidation as well as plasma oxidation has been investigated. Before oxidation, the InP surface is deoxidized with concentrated HF (40%) during 1 minute (mn), then rinsed abundantly in deionized water.…”

Section: Oxidation Of Si and Inp Surfacesmentioning

confidence: 99%

Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation

Ahmad

Pantzas

Sagnes

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Section: Oxidation Of Si and Inp Surfacesmentioning

confidence: 99%

Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation

Ahmad

Pantzas

Sagnes

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…This is especially true given that recent developments in nanotechnologies, e.g. heteroepitaxy [6] or atomic bonding [7], make possible the fabrication of new classes of interfaces.…”

Section: Introductionmentioning

confidence: 99%

Phonon transmission at Si/Ge and polytypic Ge interfaces using full-band mismatch based models

Larroque

Dollfus

Saint-Martin

2018

Journal of Applied Physics

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This paper presents theoretical investigations on the interfacial thermal conductance (Kapitza conductance) in both monotype Si/Ge (cubic 3C) and polytype (cubic 3C / hexagonal 2H) Ge interfaces by using Full Band extensions of Diffusive (DMM) and Acoustic (AMM) Mismatch Models. In that aims, phonon dispersions in the Full 3D Brillouin Zone have been computed via an atomistic adiabatic bond charge model. The effects of crystal orientation are investigated and the main phonon modes involved in heat transfer are highlighted. According to our calculations, polytype interfaces without any mass mismatch but with a crystallographic phase mismatch exhibit a thermal conductance very close to that of Si/Ge interfaces with a mass mismatch but without any phase mismatch. Besides, the orientations of Ge polytype interface that have been observed experimentally in nanowires, i.e. along   / 5051  , exhibit the lowest interfacial conductance and thus may offer new opportunities for nanoscale thermoelectric applications.

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“…Of all the contaminants, particle contaminants would be more problematic to the bonding process because particles occupy spaces that would prevent the interaction of two opposing materials to be bonded. Therefore, to obtain a high quality bonding interface, it is important to remove these contaminants without degradation to the surface . To remove all such contaminants, the silicon substrate is then rinsed with RCA1 solution in a ratio of NH 4 OH:H 2 O 2 :H 2 O = 1:4:20 to remove organic contaminants.…”

Section: Methodsmentioning

confidence: 99%

Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate

Periyanayagam

Nishiyama

Kamada

et al. 2018

Physica Status Solidi (a)

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Crystal growth on a Si substrate for the fabrication of a 1.2 mm GaInAsP laser diode is demonstrated via metal organic vapor phase epitaxy and lasing operation in the pulse regime at room temperature was successfully achieved. Direct wafer bonding at 400 C for the InP thin film and Si substrate is conducted prior to the growth process is adopted. After the bonding process, epitaxial layers are grown for the monolithic integration of InP optical devices on the wafer-bonded InP/Si substrate. The surface after crystal growth is quite smooth and contains less voids. The photoluminescence (PL) intensity of GaInAsP on the InP/Si substrate is almost equivalent to the PL intensity of InP substrate as a reference. After forming a metallic contact at the n-Si and p-InP sides, the chips are cleaved and the current density-light output (I-L) characteristics are measured. The I-L characteristics show that there is a difference in the threshold current density between the InP/Si substrate and InP substrate. The increase in the threshold current density is dependent on the measurement temperature, and that for the InP/Si substrate was as low as 4 kA cm À2 .

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Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon

Abstract: , et al.. Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on Silicon.

Cited by 32 publications

References 19 publications

Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation

Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation

Phonon transmission at Si/Ge and polytypic Ge interfaces using full-band mismatch based models

Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate

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