Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition

Kügeler, C.; Zhang, J.; Hoffmann‐Eifert, Susanne; Kim, S. K.; Waser, Rainer

doi:10.1116/1.3536487

Cited by 21 publications

(13 citation statements)

References 22 publications

(20 reference statements)

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“…The ultrathin oxide layer is grown at 360°C by plasma-assisted atomic-layer deposition, followed by an annealing step in nitrogen atmosphere at 600°C to promote crystallization. Details on the atomic-layer-deposition process and integration issues are described elsewhere [36][37][38]. VCM cells usually require an initial electroforming step before they can be switched resistively.…”

Section: Methodsmentioning

confidence: 99%

Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides

et al. 2016

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Identifying limiting factors is crucial for a better understanding of the dynamics of the resistive switching phenomenon in transition-metal oxides. This improved understanding is important for the design of fast-switching, energy-efficient, and long-term stable redox-based resistive random-access memory devices. Therefore, this work presents a detailed study of the SET kinetics of valence change resistive switches on a time scale from 10 ns to 10 4 s, taking Pt=SrTiO 3 =TiN nanocrossbars as a model material. The analysis of the transient currents reveals that the switching process can be subdivided into a lineardegradation process that is followed by a thermal runaway. The comparison with a dynamical electrothermal model of the memory cell allows the deduction of the physical origin of the degradation. The origin is an electric-field-induced increase of the oxygen-vacancy concentration near the Schottky barrier of the Pt=SrTiO 3 interface that is accompanied by a steadily rising local temperature due to Joule heating. The positive feedback of the temperature increase on the oxygen-vacancy mobility, and thereby on the conductivity of the filament, leads to a self-acceleration of the SET process.

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Section: Methodsmentioning

confidence: 99%

Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides

et al. 2016

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“…In this case the switching was usually bipolar whereas in simple binary oxides bi-and unipolar behavior has been observed. [3][4][5] In the following we are studying the RS effect in contacts based on conducting YBa 2 Cu 3 O 6+c (YBCO) films, compounds with a crystal structure which promotes electronic transport primarily within a twodimensional layer of atoms. One of the ways to shed light on their basic properties is to study an electricfield effect in the normal state.…”

mentioning

confidence: 99%

Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites

Pleceník

Tomášek

Belogolovskii

et al. 2012

Journal of Applied Physics

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Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented YBa 2 Cu 3 O 6+c (YBCO) thin films with different crystallographic orientations have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii) both were designed and fabricated, and their current-voltage characteristics have been measured. The type (i) junctions exhibited conventional bipolar resistance switching behavior, whereas in other two types the low-resistance state was unsteady and their resistance quickly relaxed to the initial high-resistance state. Physical mechanism based on the oxygen diffusion scenario, explaining such behavior, is discussed.The resistive switching (RS) effect observed in capacitor-like metal/insulator/metal junctions belongs to the most promising candidates for the next generation of the memory cell technology based on a sudden change of the junction resistance caused by an electric field applied to the metal electrodes. Despite a burst of activities triggered by increasing technological interest for this phenomenon 1,2 , details of its physical mechanism are still debated. The most studied are highly insulating binary transition metal oxides, where a key ingredient of the RS effect is believed to be a redistribution of oxygen ion vacancies which results in the formation (low-resistive state -LRS) and rupture (high-resistive state -HRS) of conductive filaments within the insulating media. 1,2 For more complex oxides like perovskites, the process of the RS effect seems to be more complicated. In this case the switching was usually bipolar whereas in simple binary oxides bi-and unipolar behavior has been observed. [3][4][5] In the following we are studying the RS effect in contacts based on conducting YBa 2 Cu 3 O 6+c (YBCO) films, compounds with a crystal structure which promotes electronic transport primarily within a twodimensional layer of atoms. One of the ways to shed light on their basic properties is to study an electricfield effect in the normal state. Up to now, two mutually exclusive field-effect mechanisms have been proposed. The first one, fundamentally electronic, is based on a conventional approach which takes into account the Coulomb interaction of an applied electric field with mobile current carriers. 6 It is fast, symmetric with respect to the bias polarity and results in the enhancement or depletion of the number of charge carriers within a few near-surface atomic layers. 6 The second mechanism 7 is related to direct interaction of oxygen ions with an applied electric field which causes significant charge carrier rearrangement due to a comparatively small oxygen migration energy and high density of vacancies in the oxygen sub-lattice in an optimal doping state. Such a process is characterized by a slower time constant and can be unequal in magnitude at positive and negative voltage biases of identical absolute value. 7 To choose between the two mechanisms of field-induced changes in normal-state...

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“…Recent findings that include the introduction of the crossbar structure [86,292] and the selection of the proper switching and electrode materials, [86,293] together with the measurement of the RRAM switching speed using TiO 2 , [86,294] have demonstrated the capability of RRAM to have ultrahigh density, good stability, and fast switching speed. This enables RRAM to be considered as a favorable competitor for next-generation NVMs.…”

Section: Rrams Using Perovskite Oxidesmentioning

confidence: 99%

Physical principles and current status of emerging non-volatile solid state memories

Wang

Yang

Wen

2015

Electron. Mater. Lett.

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Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for the next generation of data-storage devices based on a comparison of their performance.

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Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition

Cited by 21 publications

References 22 publications

Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides

Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides

Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites

Physical principles and current status of emerging non-volatile solid state memories

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