Nanostructured CdS:O film: preparation, properties, and application

Yan, Yanfa; Dhere, R. G.; Zhang, Y.; Zhou, Jie; Perkins, Craig L.; To, Bobby

doi:10.1002/pssc.200304217

Cited by 86 publications

(68 citation statements)

References 5 publications

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“…In fact, the 60/40 wt.% CdS/CdTe film had a BG value higher than that of CdS itself. We suspect this behavior is similar to that observed for CdS:O by Wu et al [2], in which CdS films were sputtered in O 2 partial pressure. In that study, amorphous CdS:O films with BGs of up to 3.1 eV were deposited.…”

Section: Resultssupporting

confidence: 89%

“…CdS x Te 1-x alloy films sputtered in 1% O 2 /Ar are amorphous as deposited and have a much higher bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for CdS:O films.…”

Section: Discussionmentioning

confidence: 51%

“…High-temperature processing steps such as the close-spaced sublimation of CdTe and the post-deposition CdCl 2 HT contribute to formation of this alloy [1]. The CdS x Te 1-x layer is thought to be important in fabricating highperformance CdTe devices because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the large lattice mismatch (~10%) between these two materials.…”

Section: Introductionmentioning

confidence: 99%

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CdS_xTe₁-_x Alloying in CdS/CdTe Solar Cells

et al. 2011

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A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thinfilm CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by radio-frequency magnetron sputtering and coevaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and coevaporated CdSxTe1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl2 heat treatment at ∼400°C for 5 min. Films sputtered in a 1% O2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl2 heat treatment. Films sputtered in O2 partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films.

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Section: Resultssupporting

confidence: 89%

Section: Discussionmentioning

confidence: 51%

Section: Introductionmentioning

confidence: 99%

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CdS_xTe₁-_x Alloying in CdS/CdTe Solar Cells

et al. 2011

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“…Further, to prevent shunting pathways and low photovoltage regions, the application of ultrathin CdS ( 50 nm) necessitates the insertion of a high resistivity metal-oxide buffer layer between the transparent conducting oxide (TCO) and CdS. In these respects, utilisation of a thicker window layer based on wide bandgap Cd-based compounds, such as Cd 1Àx Zn x S alloys 2 or nanocrystalline CdS:O, 3 is foreseen to change practices in the fabrication of CdTe photovoltaic devices. However, successful implementation of such window layers requires good understanding and control of the window layer properties through subsequent fabrication processes and within the final device structure.…”

Section: Introductionmentioning

confidence: 99%

CdCl2 treatment related diffusion phenomena in Cd1−xZnxS/CdTe solar cells

Kartopu

Taylor

Clayton

et al. 2014

Journal of Applied Physics

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Utilisation of wide bandgap Cd1−xZnxS alloys as an alternative to the CdS window layer is an attractive route to enhance the performance of CdTe thin film solar cells. For successful implementation, however, it is vital to control the composition and properties of Cd1−xZnxS through device fabrication processes involving the relatively high-temperature CdTe deposition and CdCl2 activation steps. In this study, cross-sectional scanning transmission electron microscopy and depth profiling methods were employed to investigate chemical and structural changes in CdTe/Cd1−xZnxS/CdS superstrate device structures deposited on an ITO/boro-aluminosilicate substrate. Comparison of three devices in different states of completion—fully processed (CdCl2 activated), annealed only (without CdCl2 activation), and a control (without CdCl2 activation or anneal)—revealed cation diffusion phenomena within the window layer, their effects closely coupled to the CdCl2 treatment. As a result, the initial Cd1−xZnxS/CdS bilayer structure was observed to unify into a single Cd1−xZnxS layer with an increased Cd/Zn atomic ratio; these changes defining the properties and performance of the Cd1−xZnxS/CdTe device.

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“…for fabricating CdS thin films have been developed. In CdS-based solar cells, the optical and electrical properties of the CdS films are significant for improving the whole cell device performance [15,16]. The higher carrier density and wider band gap for CdS films are the vital factor in improving the open circuit voltage of the solar cell [15,16].…”

Section: Introductionmentioning

confidence: 99%