Nanosized High κ Dielectric Material for FINFET

Nirmal, D.; Nalini, B.; Vijayakumar, P.

doi:10.1080/10584587.2010.492014

Cited by 23 publications

(15 citation statements)

References 5 publications

(2 reference statements)

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“…A figure of merit to judge a highgate dielectric layer is the equivalent oxide thickness (EOT) = ( SiO 2 / high-)d . If a dielectric material with a higher dielectric constant (high-) can replace SiO 2 , the dielectric layer thickness can be increased proportionally while keeping the same gate capacitance [2,3]. Since a thicker layer is used for insulation, the tunnelling current is drastically reduced in the tunnelling region.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Dielectric Studies of Monoclinic Nanosized Zirconia

Nesamani

Prabha²,

Paul

et al. 2014

Advances in Condensed Matter Physics

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Zirconium dioxide is a prospective high-κmaterial that can replace silicon dioxide. Zirconium dioxide nanoparticle has been synthesized using sol-gel process at room temperature. The structural and morphological characterization of the nanoscaled zirconium dioxide is done using FTIR, SEM, X-ray diffraction, and TEM. The particle size of the synthesized ZrO2is observed in the range of 50–80 nm with an average crystallite size of 2–10 nm. The results are compared with commercial coarse zirconia which showed a particle size in the range of 900 nm–2.13 µm and crystallite size of 5.3 nm–20 nm. It is expected that both nanoscaling and the high dielectric constant of ZrO2would be useful in replacing the low-κSiO2dielectric with high-κZrO2for CMOS fabrication technology. The synthesized ZrO2is subjected to impedance analysis and it exhibited a dielectric constant of 25 to find its application in short channel devices like multiple gate FinFETS and as a suitable alternative for the conventional gate oxide dielectric SiO2with dielectric value of 3.9, which cannot survive the challenge of an end of oxide thickness ≤ 1 nm.

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Section: Introductionmentioning

confidence: 99%

Synthesis and Dielectric Studies of Monoclinic Nanosized Zirconia

Nesamani

Prabha²,

Paul

et al. 2014

Advances in Condensed Matter Physics

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“…The precipitate was filtered and washed with dilute HCl and demonized water repeatedly. Then the precipitate was dried at controlled atmosphere at 100 о C [75]. The outcome of this preparation given the thermally stable with nanosize Zirconium-di-oxide material is observed [75], it gives excellent improvement in the FinFET devices.…”

Section: Dry Chemical Processmentioning

confidence: 98%

“…There have been many review papers, and industry consensus that proposed a criterion for choosing alternative high-k materials for in MOSFET for different applications. [ 8,9,11,12,13,14] Its observed that Zirconiam-di-oxide is one of the alternate material for gate oxide in the FinFET [75]. Zirconia is the most appropriate metal oxide since it is thermodynamically stable with Si [15].The figure.1 shows the TEM microphotograph of nanocrystalline ZrO 2 particles prepared by hydrothermal method and stability of the material in the nanosize, since it has a dielectric constant value of 25, a large energy bandgap it is suggested for FinFET device.…”

Section: Selection Of Zirconium As High K Materialsmentioning

confidence: 99%

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A Review of Nanoscale Channel and Gate Engineered FINFETs for VLSI Mixed Signal Applications Using Zirconium - di - Oxide Dielectrics

Nirmal¹,

Kumar²,

Shruti³

et al. 2014

JESTR

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In the past, most of the research and development efforts in the area of CMOS and IC's are oriented towards reducing the power and increasing the gain of the circuits. While focusing the attention on low power and high gain in the device, the materials of the device also been taken into consideration. In the present technology, Computationally intensive devices with low power dissipation and high gain are becoming a critical application domain. Several factors have contributed to this paradigm shift. The primary driving factor being the increase in scale of integration, the chip has to accommodate smaller and faster transistors than their predecessors. During the last decade semiconductor technology has been led by conventional scaling. Scaling, has been aimed towards higher speed, lower power and higher density of the semiconductor devices. However, as scaling approached its physical limits, it has become more difficult and challenging for fabrication industry. Therefore, tremendous research has been carried out to investigate the alternatives, and this led to the introduction of new Nano materials and concepts to overcome the difficulties in the device fabrications. In order to reduce the leakage current and parasitic capacitance in devices, gate oxide high-k dielectric materials are explored. Among the different high-k materials available the nano size Zirconium dioxide material is suggested as an alternate gate oxide material for devices due to its thermal stability and small grain size of material. To meet the requirements of ITRS roadmap 2012, the Multi gate devices are considered to be one of the most promising technologies for the future microelectronics industry due to its excellent immunity to short channel effects and high value of On current. The double gate or multi gate devices provide a better scalability option due to its excellent immunity to short-channel effects. Here the different high-k materials are replaced in different Multi Gate MOSFET devices and its performance were studied.

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“…may be advantageously employed for high performance semiconductor devices [1][2][3][4] . Also the larger physical thickness t hk of the high-k dielectric reduces the parasitic gatesource/drain (G-S/D) outer fringe capacitance 5 .…”

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confidence: 99%