Nanosecond pulsed-bias-actuated and exciton-dynamics-induced chirp in InGaN/GaN LEDs towards realizing electrically-tunable broadband light emitters

Pendem, Vikas; Saha, D.; Chouksey, Shonal; Ganguly, Swaroop

doi:10.1016/j.jlumin.2020.117703

Cited by 3 publications

(5 citation statements)

References 35 publications

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“…The slower time constant t 2 is associated with the radiative recombination processes (process P5). It becomes faster with increasing confinement as t 2 decreases from 694 ps for QW to 332 (174) ps for 50 (20) nm QWI. A significant decrease in t 2 from 255 to 150 ps is also observed in 30 and 12 nm QD samples, respectively.…”

Section: Carrier Decay Kineticsmentioning

confidence: 96%

“…Emission wavelength and surface/interface material properties can be altered by reducing the dimensionality/size of the devices. [ 19–21 ] quantum well (QW; 2D), [ 22–24 ] vertical/lateral nanowires (1D), [ 25–29 ] and quantum dots (QDs; 0D) [ 30–33 ] are among the most important quantum‐confined nanostructures used in the active regions of modern optoelectronic devices including LEDs, lasers, photodetectors, and solar cells. Improved internal quantum efficiency, [ 34–36 ] large surface‐to‐volume ratio, [ 37 ] low power consumption, [ 38–40 ] strain‐free and defect‐free growth mechanism, [ 41,42 ] and larger electron‐hole wavefunction overlap due to higher confinement are some of the major advantages of these nanostructures.…”

Section: Introduction To Ingan/gan Quantum‐confined Heterostructuresmentioning

confidence: 99%

“…Emission wavelength and surface/interface material properties can be altered by reducing the dimensionality/size of the devices. [19][20][21] quantum well (QW; 2D), [22][23][24] vertical/lateral nanowires (1D), [25][26][27][28][29] and quantum dots (QDs; 0D) [30][31][32][33] are among the most important quantum-confined nanostructures used in the active regions of modern optoelectronic devices including LEDs, lasers, photodetectors, and solar cells. Improved internal quantum efficiency, [34][35][36] large surface-to-volume ratio, [37] low power…”

mentioning

confidence: 99%

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Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy

Aggarwal

Udai

Banerjee

et al. 2021

Physica Status Solidi (b)

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III-V compound semiconductors laid the foundation for optoelectronic devices and solid-state lighting with wavelengths ranging from infrared to ultraviolet regions. Infrared to green light-emitting diodes (LEDs) were invented in the early 1960s. [1][2][3] However, blue LEDs took another three decades to get established, considering the challenges in defect-free high-quality growth, [4][5][6] and controlled p-doping of wide-bandgap semiconductors. [7][8][9][10] The success of blue LEDs was accomplished by the development of gallium-nitride (GaN) alloyed with indium and aluminum in the late 1980s. [11,12] GaN and related materials have a wurtzite crystal structure and direct bandgap, making them ideal for bright LEDs and laser diodes (LDs). In order to move the emission wavelength to the visible range (2-3.4 eV), InN is alloyed with GaN. [13,14] Advancement in GaN-based LEDs revolutionized the white broadband lighting when laminated with yellow phosphorous coating. Nakamura et al. developed the first high-quality InGaN back in 1992, which paved the way for III-nitride blue and green LEDs/ LDs. [15] In 1995-1996, Nakamura made true blue LEDs possible by developing recombination regions with InGaN. [16] III-nitride devices acquire a wide area of applications due to their wavelength tunability by varying the alloy composition of In and Al in InGaN and AlGaN, respectively. [17,18] Moreover, an additional degree of freedom can be achieved using quantum-confined nanostructures. Emission wavelength and surface/interface material properties can be altered by reducing the dimensionality/size of the devices. [19][20][21] quantum well (QW; 2D), [22][23][24] vertical/lateral nanowires (1D), [25][26][27][28][29] and quantum dots (QDs; 0D) [30][31][32][33] are among the most important quantum-confined nanostructures used in the active regions of modern optoelectronic devices including LEDs, lasers, photodetectors, and solar cells. Improved internal quantum efficiency, [34][35][36] large surface-to-volume ratio, [37] low power

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Section: Carrier Decay Kineticsmentioning

confidence: 96%

Section: Introduction To Ingan/gan Quantum‐confined Heterostructuresmentioning

confidence: 99%

mentioning

confidence: 99%

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Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy

Aggarwal

Udai

Banerjee

et al. 2021

Physica Status Solidi (b)

Self Cite

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“…This shift, also called chirp, in the emission spectra is caused by the turn‐on dynamics, which is determined by the transient QCSE. [ 31 ]…”

Section: Resultsmentioning

confidence: 99%

“…This shift, also called chirp, in the emission spectra is caused by the turn-on dynamics, which is determined by the transient QCSE. [31] For all measured bias voltages, a redshift is visible. This shift is caused by the charge carrier decay, which leads to an increase of the QW tilt.…”

Section: Wavelength Shiftmentioning

confidence: 88%

Bright Emission at Reverse Bias After Trailing Edge of Driving Pulse in Wide InGaN Quantum Wells

Tepaß

Uhlig

Hajdel

et al. 2023

Physica Status Solidi (a)

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In group‐III‐nitride quantum wells (QWs), a strong piezoelectric field is formed. A built‐in potential from the p–n junction is working in the opposite direction depending on an externally applied voltage. Furthermore, the electric field in the QW can be partially screened by a high charge carrier density. Herein, the influence of these effects on recombination and spectrum for over 10 nm wide InGaN QWs is investigated. The very low overlap of electrons and holes would suggest inefficient devices. However, it is shown that thick QWs can be more effective and reach high optical gain. This can be explained by the screening of the electric field, resulting in a high overlap of excited electron and hole states that enable lasing. Herein, a pulsed electrical excitation scheme is used, where carrier injection at forward bias and predominant recombination at zero or reverse bias are separated in time. The interplay between the piezoelectric field and the built‐in potential on carrier recombination in dependence on an external bias voltage is observed. In particular, a strong increase of the radiative recombination rate after the trailing edge of the driving pulse is observed.

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True Fractional Dimensional Nature of Semiconductor Nanostructures: Removing the Anomaly in the Estimation of Quantum Mechanical Properties

Pendem

Ganguly

Saha

2022

IEEE Trans. Nanotechnology

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Nanosecond pulsed-bias-actuated and exciton-dynamics-induced chirp in InGaN/GaN LEDs towards realizing electrically-tunable broadband light emitters

Cited by 3 publications

References 35 publications

Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy

Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy

Bright Emission at Reverse Bias After Trailing Edge of Driving Pulse in Wide InGaN Quantum Wells

True Fractional Dimensional Nature of Semiconductor Nanostructures: Removing the Anomaly in the Estimation of Quantum Mechanical Properties

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