2006
DOI: 10.1016/j.apsusc.2006.01.077
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Nanosecond pulse laser melting investigation by IR radiometry and reflection-based methods

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Cited by 40 publications
(29 citation statements)
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“…5, is specific for silicon and not present for metallic samples. It is caused by changes in the optical behavior of silicon with phase change as described in [16]. Oscillations at the beginning of the plateau are perturbations produced by the IR detector after a fast change in the IR signal.…”
Section: Liquid-phase Emissivitymentioning
confidence: 99%
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“…5, is specific for silicon and not present for metallic samples. It is caused by changes in the optical behavior of silicon with phase change as described in [16]. Oscillations at the beginning of the plateau are perturbations produced by the IR detector after a fast change in the IR signal.…”
Section: Liquid-phase Emissivitymentioning
confidence: 99%
“…The present surface temperature measurement system was also used in investigations of nanosecond laser melting [16]. During cooling after the laser pulse, a solidification plateau appears at the end of the solidification of the liquid phase.…”
Section: Liquid-phase Emissivitymentioning
confidence: 99%
See 1 more Smart Citation
“…Phase and/or structural changes are detected by means of the time-resolved reflectivity (TRR) method. This optical method was earlier used to investigate semiconductor materials during laser thermal processing [5][6][7][8][9]. The pulsed laser heats the sample and induces temperature rise, phase, morphological or other changes on its surface.…”
Section: Introductionmentioning
confidence: 99%
“…Each pulse results in melting followed by damped oscillations of the melted surface due to the forces of surface tension and viscosity. If the oscillations damp out within the time that the surface is molten, a smoother surface will result upon solidification [16,17]. Analytical models were proposed to describe the dynamics of the melt pool [10][11][12].…”
Section: Introductionmentioning
confidence: 99%